STP36N60M6 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 16

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220 type A package information
  • 4.2 TO-247 package information
  • 5 Revision history

Features

Order code VDS RDS(on) max. ID STP36N60M6

600 V 99 mΩ 30 A

 Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100% avalanche tested  Zener-protected

Applications

 Switching applications

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end- application efficiency. Table 1: Device summary Order code Marking Package Packaging STP36N60M6 36N60M6 TO-220 Tube STW36N60M6 TO-247 TO-247 TAB TO-220

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 30 A ID Drain current (continuous) at TC = 100 °C 19 A ID(1) Drain current (pulsed) 102 A PTOT Total dissipation at TC = 25 °C 208 W dv/dt(2) Peak diode recovery voltage slope 15 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range Notes: (1)Pulse width limited by safe operating area. (2)ISD ≤ 30 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V. (3)VDS ≤ 480 V Table 3: Thermal data Symbol Parameter Value Unit TO-220 TO-247 Rthj-case Thermal resistance junction-case 0.6 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 50 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 750 mJ

2 Electrical characteristics

TC = 25 °C unless otherwise specified Table 5: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C(1) 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3.25 4 4.75 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 15 A 85 99 mΩ Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS= 100 V, f = 1 MHz, VGS = 0 V - 1960 - pF Coss Output capacitance - 93 - pF Crss Reverse transfer capacitance - 6 - pF Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 332 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.6 - Ω Qg Total gate charge VDD = 480 V, ID = 30 A, VGS = 0 to 10 V (see Figure 17: "Test circuit for gate charge behavior") - 44.3 - nC Qgs Gate-source charge - 10.1 - nC Qgd Gate-drain charge - 25 - nC Notes: (1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS

Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 15 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18: "Test circuit for inductive load switching and diode recovery times" and Figure 21: "Switching time waveform") - 15.2 - ns tr Rise time - 5.3 - ns td(off) Turn-off-delay time - 50.2 - ns tf Fall time - 7.3 - ns Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 30 A ISDM,(1) Source-drain current (pulsed) 102 A VSD (2) Forward on voltage VGS = 0 V, ISD = 30 A - 1.6 V trr Reverse recovery time ISD = 30 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 340 ns Qrr Reverse recovery charge - 5.3 µC IRRM Reverse recovery current - 31 A trr Reverse recovery time ISD = 30 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 430 ns Qrr Reverse recovery charge - 7.7 µC IRRM Reverse recovery current - 36 A Notes: (1)Pulse width is limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area for TO-220 Figure 3: Thermal impedance for TO-220 Figure 4: Safe operating area for TO-247 Figure 5: Thermal impedance for TO-247 Figure 6: Output characteristics Figure 7: Transfer characteristics δ=0.5 K 10 tp(s)-5 10-4 10-3 10-1 δ=0.2 10-1 Single pulse 0.05 0.02 0.01 0.1 GC20540_ZTH δ=0.5 Single pulse 0.05 0.02 0.01 0.1 K 10 tp(s)-5 10-4 10-3 10-1 δ=0.2 10-2 10-1 GC18460_ZTH

STP36N60M6, STW36N60M6 Test circuits

3 Test circuits

Figure 16: Test circuit for resistive load switching times Figure 17: Test circuit for gate charge behavior Figure 18: Test circuit for inductive load switching and diode recovery times Figure 19: Unclamped inductive load test circuit Figure 20: Unclamped inductive waveform Figure 21: Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 TO-220 type A package information

Figure 22: TO-220 type A package outline

Table 9: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95

4.2 TO-247 package information

Figure 23: TO-247 package outline 0075325_8

Table 10: TO-247 package mechanical data Dim. mm Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70

5 Revision history

Table 11: Document revision history Date Revision Changes 06-Oct-2015 1 First release 14-Oct-2015 2 Updated: VDD value in Table 8: "Source drain diode" Minor text changes 27-Mar-2017 3 Updated Table 2: "Absolute maximum ratings". Updated Section 2: "Electrical characteristics". Updated Section 4: "Package information". Minor text changes