STP35NF10

STP35NF10 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 100V - 0.030Ω -4 0 AT O - 2 2 0/D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET (1) ISD ≤35A, di/dt≤300A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX. (2) Starting Tj= 25°C, ID = 20A, VDD =8 0 V ■ TYPICAL R DS (on) = 0.030Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power Mosfet series realized with STMicro- electronics unique STripFET process has specifical- ly been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS (● ) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP35NF10 STB35NF10 100 V 100 V < 0.035Ω < 0.035Ω 40 A 40 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0 ) 100 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 100 V VGS Gate- source Voltage ±20 V ID Drain Current (continuous) at TC = 25°C 40 A ID Drain Current (continuous) at TC = 100°C 28 A IDM (/circle6 ) Drain Current (pulsed) 160 A PTOT Total Dissipation at TC = 25°C 115 W Derating Factor 0.77 W/°C dv/dt (1) Peak Diode Recovery voltage slope 13 V/ns EAS (2) Single Pulse Avalanche Energy 300 mJ Tstg Storage Temperature –5 5t o1 7 5 ° C Tj Operating Junction Temperature TO-220 3 1 D 2PAK INTERNAL SCHEMATIC DIAGRAM

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 1.30 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 100 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ±20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 234V R DS(on) Static Drain-source On Resistance VGS =1 0 V ,ID = 17.5 A 0.030 0.035 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS =1 5 V,ID =1 7 . 5A 2 0 S C iss Input Capacitance VDS =2 5 V ,f=1M H z ,VGS =0 1550 pF C oss Output Capacitance 220 pF C rss Reverse Transfer Capacitance 95 pF

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =5 0 V ,ID = 17.5 A R G = 4.7Ω VGS =1 0 V (see test circuit, Figure 3) 17 ns tr Rise Time 60 ns Q g Total Gate Charge V DD =8 0 V ,ID =35A,VGS = 10V 55 nC Q gs Gate-Source Charge 12 nC Q gd Gate-Drain Charge 20 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 50V, ID =1 7 . 5A , R G =4 . 7Ω, VGS = 10V (see test circuit, Figure 3) ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 40 A ISDM (2) Source-drain Current (pulsed) 160 A VSD (1) Forward On Voltage ISD =3 5A ,VGS =0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 35 A, di/dt = 100A/µs, VDD =2 5 V ,Tj= 150°C (see test circuit, Figure 5) 160 720 ns nC A Thermal ImpedenceSafe Operating Area

Capacitance VariationsGate Charge vs Gate-source Voltage Transconductance Static Drain-source On Resistance Output Characteristics Transfer Characteristics

Source-drain Diode Forward Characteristics Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuit For Resistive Load

DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

DIM. mm. inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 8º D 2PAK MECHANICAL DATA

TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

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