STP35N60DM2 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220 type A package information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID PTOT STP35N60DM2 600 V 0.110 Ω 28 A 210 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STP35N60DM2 35N60DM2 TO-220 Tube
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID Drain current (continuous) at Tcase = 25 °C 28 A Drain current (continuous) at Tcase = 100 °C 17 IDM (1) Drain current (pulsed) 112 A PTOT Total dissipation at Tcase = 25 °C 210 W dv/dt(2) Peak diode recovery voltage slope 50 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 28 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400. (3) VDS ≤ 480 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.6 °C/W Rthj-amb Thermal resistance junction-amb 62.5 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive 6 A EAS (1) Single pulse avalanche energy 650 mJ Notes: (1) starting Tj = 25 °C, ID = IAR, VDD = 50 V.
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V µA VGS = 0 V, VDS = 600 V, Tcase = 125 °C 100 IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 14 A 0.094 0.11 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 2400 - pF Coss Output capacitance - 110 - Crss Reverse transfer capacitance - 2.8 - Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 190 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4.3 - Ω Qg Total gate charge VDD = 480 V, ID = 28 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") - 54 - nC Qgs Gate-source charge - 14.6 - Qgd Gate-drain charge - 24.2 - Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 14 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 21.2 - ns tr Rise time - 17 - td(off) Turn-off delay time - 68 - tf Fall time - 10.7 - Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 28 A ISDM (1) Source-drain current (pulsed) 112 A VSD (2) Forward on voltage VGS = 0 V, ISD = 28 A - 1.6 V trr Reverse recovery time ISD = 28 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 120 ns Qrr Reverse recovery charge - 572 nC IRRM Reverse recovery current - 10.2 A trr Reverse recovery time ISD = 28 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 215 ns Qrr Reverse recovery charge - 1.89 µC IRRM Reverse recovery current - 17.7 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A ±30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance K tp Ƭ Zth= K*Rthj-c δ= tp/Ƭ Single pulse 0.01 δ=0.5 10-1 10-2 10-410-5 10-3 10-2 10-1 tP(s) 0.2 0.1 0.05 0.02
3 Test circuits
Figure 14: Test circuit for resistive load switching times Figure 15: Test circuit for gate charge behavior Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220 type A package information
Figure 20: TO-220 type A package outline
Table 10: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95
5 Revision history
Table 11: Document revision history Date Revision Changes 10-Sep-2015 1 Initial version