STP3415 DGNJDZ | Alldatasheet

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-20V/-4.0A, RDS(ON) =45m (typ.)@VGS =-4.5V -20V/-4.0A, RDS(ON) =54m (typ.)@VGS =-2.5V -20V/-2.0A, RDS(ON) =68m (typ.)@VGS =-1.8V -20V/-1.0A, RDS(ON) =92m (typ.)@VGS =-1.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Cellular/Portable Load Switch Drain Source Gate S D G SOT-23L Top View ESD Protected : 3KV The STP3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent R DS(ON).low gate charge and operation with gate voltage as 1.5V This device is suitable for use as a load switch or in applications. STP3415S-TRG ROHS Compliant This is Halogen Free a : Company name. b : Channel type. c : Product Serial number. d : ESD (Blank for product without ESD). e : Package Code f : Handling Code g : Lead Plating Code G : Lead-free product. This product is Halogen Free ST P 3415 E S - TR G a b c d e f g -20V P-Channel Enhancement Mode MOSFET

Part Number Package Code Handling Code Shipping STP3415ES-TRG S : SOT-23L TR : Tape&Reel 3K/Reel Year Code : 0 ~ 9, 2010 : 0 Week Code : A(1~2) ~ Z(53~54) SOT-23L : Only available in tape and reel packaging. Symbol Parameter Typical Unit VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V Continuous Drain Current (TC=25°C) A -4.0 A ID Continuous Drain Current (TC=70°C) A VGS=-8V -3.5 A IDM Pulsed Drain Current B -20 A PD Power Dissipation TA=25°C TA=70°C 1.5 0.9 W TJ Operation Junction Temperature -55 to150 °C TSTG Storage Temperature Range -55 to150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Symbol Parameter Typ Max Unit R JA Thermal Resistance-Junction to Ambient Steady-State - 140 °C/W R JL Thermal Resistance Junction to Lead Steady-State - 80 °C/W

Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=-250 A -20 V VGS(th) Gate Threshold Voltage V DS=VGS,ID=-250 A -0.3 -1.0 V IGSS Gate Leakage Current V DS=0V,VGS=±8V ±10 A VDS=-20V,VGS=0V TJ=25°C -1 IDSS Zero Gate Voltage, Drain-Source Leakage Current VDS=-20V,VGS=0V TJ=55°C -5 A RDS(ON) Drain-source On-Resistance B VGS=-4.5V,ID=-4.0A VGS=-2.5V,ID=-4.0A VGS=-1.8V,ID=-2.0A VGS=-1.5V,ID=-1.0A 110 m Gfs Forward Transconductance V DS=-5V,ID=-4.0A 22 S Source-Drain Doide VSD Diode Forward Voltage I S=-1.0A,VGS=0V -0.67 -1.0 V IS Continuous Source Current AD -6 A Dynamic Parameters Qg (-4.5V) Total Gate Charge 11.1 Qgs Gate-Source Charge 3.1 Qgd Gate-Drain Charge VDS=-10V VGS=-4.5V ID -4.0A 2.4 nC Ciss Input Capacitance 989 Coss Output Capacitance 167 Crss Reverse Transfer Capacitance VDS=-10V VGS=0V f=1MHz 75.5 pF td(on) 712 tr Turn-On Time 1386 nS td(off) 9.1 tf Turn-Off Time VDD=-10V ID=-1A VGEN=-4.5V RG=2.5 A Note: A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 B. The data tested by pulsed , pulse width 300uS , duty cycle D. The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation.

DS-Drain Source Voltage(V) VGS=-1.5V VGS=-2.5V VGS=-3V -4.5V VGS=-1.8V Drain-Source On Resistance 100 120 0 2 4 6 8 GS-Gate Source Voltage(V) C 125°C Drain Source On Resistance 100 1 2 4 6 8 10 -ID-Drain Current(A) VGS=-1.8V VGS=-2.5 VGS=-4.5V VGS=-1.5V Gate Charge 0 2 2 4 6 8 10 12 QG-Gate Charge(nC) Drain Source Resistance 0.8 1.2 1.4 1.6 0 25 50 75 100 125 150 Tj-Junction Temperature(°C) VGS=-1.8V, ID=-1.8A VGS=-2.5V, ID=-2.0A VGS=-4.5V, ID=-4.0V Transfer Characteristics 0 0.5 1 1.5 2 2.5 -VGS-Gate Source Voltage(V) 25°C 125°C

DS-Drain Source Voltage(V) Ciss Coss Crss Power Dissipation 0.5 1.5 2.5 3.5 0 20 40 60 80 100 120 140 160 TJ-Junction Temperature(°C) Drain Current 0.5 1.5 2.5 3.5 4.5 0 20 40 60 80 100 120 140 160 TJ-Junction Temperature(°C) Thermal Transient Impedance 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(Sec) Single Pulse Source Drain Diode Forward 0.00001 0.0001 0.001 0.01 0.1 -VSD-Source Drain Voltage(V) 25° 125°C