STB33N60DM2 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 20

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 D²PAK package information
  • 4.2 D²PAK packing information
  • 4.3 TO-220 type A package information
  • 4.4 TO-247 package information
  • 5 Revision history

Features

Order code VDS @ TJmax. RDS(on) max. ID STB33N60DM2 650 V 0.130 Ω 24 A STP33N60DM2 650 V 0.130 Ω 24 A STW33N60DM2 650 V 0.130 Ω 24 A  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected

Applications

 Switching applications

Description

These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB33N60DM2 33N60DM2 D²PAK Tape and reel STP33N60DM2 33N60DM2 TO-220 Tube STW33N60DM2 33N60DM2 TO-247 Tube

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID Drain current (continuous) at Tcase = 25 °C 24 A Drain current (continuous) at Tcase = 100 °C 15.5 IDM(1) Drain current (pulsed) 96 A PTOT Total dissipation at Tcase = 25 °C 190 W dv/dt(2) Peak diode recovery voltage slope 50 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 24 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V. (3) VDS ≤ 480 V. Table 3: Thermal data Symbol Parameter Value Unit D²PAK TO-220 TO-247 Rthj-case Thermal resistance junction-case 0.66 °C/W Rthj-pcb Thermal resistance junction-pcb(1) 30 Rthj-amb Thermal resistance junction-ambient 62.5 50 Notes: (1)When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax) 5.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 570 mJ

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V µA VGS = 0 V, VDS = 600 V, Tcase = 125 °C 100 IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 12 A 0.110 0.130 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 1870 - pF Coss Output capacitance - 87 - Crss Reverse transfer capacitance - 2 - Coss eq.(1) Equivalent output capacitance VDD = 480 V, VGS = 0 V - 157 - pF RG Intrinsic gate resistance f = 1 MHz, ID= 0 A - 4.5 - Ω Qg Total gate charge VDD = 480 V, ID = 24 A, VGS = 10 V (see Figure 19: "Test circuit for gate charge behavior" and Figure 23: "Switching time waveform") - 43 - nC Qgs Gate-source charge - 9.8 - Qgd Gate-drain charge - 21 - Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 12 A RG = 4.7 Ω, VGS = 10 V (see Figure 18: "Test circuit for resistive load switching times" and ) - 17 - ns tr Rise time - 8 - td(off) Turn-off delay time - 62 - tf Fall time - 9 -

Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 24 A ISDM(1) Source-drain current (pulsed) 96 A VSD(2) Forward on voltage VGS = 0 V, ISD = 24 A - 1.6 V trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 20: "Test circuit for inductive load switching and diode recovery times") - 150 ns Qrr Reverse recovery charge - 0.5 µC IRRM Reverse recovery current - 8.8 A trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 20: "Test circuit for inductive load switching and diode recovery times") - 316 ns Qrr Reverse recovery charge - 2.85 µC IRRM Reverse recovery current - 18 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A ±30 - - V

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area for D²PAK Figure 3: Thermal impedance for D²PAK Figure 4: Safe operating area for TO-220 Figure 5: Thermal impedance for TO-220 Figure 6: Safe operating area for TO-247 Figure 7: Thermal impedance for TO-247 K tp Ƭ Zth= K*Rthj-c δ= tp/Ƭ Single pulse 0.01 δ=0.5 10-1 10-2 10-410-5 10-3 10-2 10-1 tP(s) 0.2 0.1 0.05 0.02 K tp Ƭ Zth= K*Rthj-c δ= tp/Ƭ Single pulse 0.01 δ=0.5 10-1 10-2 10-410-5 10-3 10-2 10-1 tP(s) 0.2 0.1 0.05 0.02

STB33N60DM2, STP33N60DM2, STW33N60DM2 Test circuits

3 Test circuits

Figure 18: Test circuit for resistive load switching times Figure 19: Test circuit for gate charge behavior Figure 20: Test circuit for inductive load switching and diode recovery times Figure 21: Unclamped inductive load test circuit Figure 22: Unclamped inductive waveform Figure 23: Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 D²PAK package information

Figure 24: D²PAK (TO-263) type A package outline 0079457_A_rev22

Table 10: D²PAK (TO-263) type A package mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 10.40 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0°

Figure 25: D²PAK (TO-263) recommended footprint (dimensions are in mm)

4.2 D²PAK packing information

Figure 26: Tape outline

Figure 27: Reel outline Table 11: D²PAK tape and reel mechanical data Tape Reel Dim. mm Dim. mm Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3

4.3 TO-220 type A package information

Figure 28: TO-220 type A package outline

Table 12: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95

4.4 TO-247 package information

Figure 29: TO-247 package outline

Table 13: TO-247 package mechanical data Dim. mm. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70

5 Revision history

Table 14: Document revision history Date Revision Changes 16-Oct-2014 1 First release. 02-Nov-2015 2 Document status promoted from preliminary to production data. Updated title and features in cover page. Updated Table 2: "Absolute maximum ratings", Table 4: "Avalanche characteristics", Table 5: "Static", Table 6: "Dynamic", Table 7: "Switching times" and Table 8: "Source-drain diode". Added Section 2.1 Electrical characteristics (curves).