STP315N10F7 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information data
- 4.1 TO-220 type A package information
- 5 Revision history
Features
Order code VDS RDS(on)max ID STP315N10F7 100 V 2.7 mΩ 180 A Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STP315N10F7 315N10F7 TO-220 Tube AM01475v1_Tab D(2, TAB) G(1) S(3)
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at TC = 25 °C 180 A ID(1) Drain current (continuous) at TC = 100 °C 120 A IDM(2) Drain current (pulsed) 720 A PTOT Total dissipation at TC = 25 °C 315 W EAS(3) Single pulse avalanche energy (TJ = 25 °C, L=0.55 mH, IAS=65 A) 1 J TJ Operating junction temperature range -55 to 175 °C Tstg Storage temperature range Notes: (1)Current limited by package. (2)Pulse width limited by safe operating area. (3)Starting TJ=25°C, ID=60 A, VDD=50 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.48 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 4: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID= 250 μA 100 V IDSS Zero gate voltage drain current VGS= 0 V, VDS= 100 V 1 µA VGS= 0 V, VDS= 100 V, TC= 125 °C (1) 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 2.5 3.5 4.5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 60 A 2.3 2.7 mΩ Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0 V, VDS= 25 V, f = 1 MHz - 12800 - pF Coss Output capacitance - 3500 - pF Crss Reverse transfer capacitance - 170 - pF Qg Total gate charge VDD = 50 V, ID = 180 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") - 180 - nC Qgs Gate-source charge - 78 - nC Qgd Gate-drain charge - 34 - nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 50V, ID = 90 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 62 - ns tr Rise time - 108 - ns td(off) Turn-off delay time - 148 - ns tf Fall time - 40 - ns
Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 180 A ISDM(1) Source-drain current (pulsed) 720 A VSD(2) Forward on voltage VGS = 0 V, ISD= 60 A - 1.5 V trr Reverse recovery time ISD = 180 A, di/dt = 100 A/µs VDD = 80 V, TJ= 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 85 ns Qrr Reverse recovery charge - 200 nC IRRM Reverse recovery current - 4.7 A Notes: (1)Pulse width limited by safe operating area. (2)Pulse duration = 300μs, duty cycle 1.5%
2.2 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance tp(s) K 0.2 0.05 0.02 0.01 0.1 Zth=k Rthj-c ᵟ=tp/ t tp t Single pulse ᵟ=0.5 280tok VGS=10V ID 150 100 0 4 VDS(V)8 (A) 2 6 200 250 8V300 AM14734v1 ID 150 100 0 4 VGS(V)8 (A) 2 6 200 250 VDS = 2V 300 350 1 3 5 7 AM14735v1 VGS
0 Qg(nC)
(V) 100 VDD=50V ID=180 A 150 AM14736v1
TJ=-50°C TJ=150°C TJ=25°C VSD 0 40 ISD(A) (V) 16080 120 0.45 0.55 0.65 0.75 0.85 0.95 1.05 AM14739v1 Figure 8: Capacitance variations Figure 9: Normalized on-resistance vs temperature Figure 10: Normalized V(BR)DSS vs temperature Figure 11: Normalized gate threshold voltage vs temperature Figure 12: Source-drain diode forward characteristics C 6000 4000 2000 0 40 VDS(V) (pF) 8000 Ciss Coss Crss 10000 14000 80 100 12000 AM14738v1 RDS(on) 1.6 1.2 0.8 0.4
0 TJ(°C)
(norm) -25 7525-75 125 2.0 ID = 60A AM14740v1 -25 7525-75 125 V(BR)DSS TJ(°C) (norm) 0.94 0.96 0.98 1.00 1.02 1.04 ID = 1m A AM14742v1 VGS(th) 0.90 0.80 0.70 0.60 TJ(°C) (norm) 1.0 0-25 7525-75 125 ID = 250µ A AM14741v1
3 Test circuits
Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
4 Package information data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220 type A package information
Figure 19: TO-220 type A package outline
Table 8: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95
5 Revision history
Table 9: Document revision history Date Revision Changes 07-Oct-2013 1 First release. 27-May-2014 2 – Modified: title and Features in cover page – Minor text changes 12-Sep-2014 3 – Modified: title, features and description in cover page. 29-Aug-2016 4 Modified: Table 2: "Absolute maximum ratings" and Table 4: "On /off states" Updated: Section 7.1: "TO-220 type A package information" Minor text changes