STP30NS15LFP STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 150V - 0.085 Ω - 10A TO-220FP MESH OVERLAY™ POWER MOSFET ■ TYPICAL R DS (on) = 0.085Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

■ SWITCHING “S” CAPACITOR TYPE VDSS R DS(on) ID STP30NS15LFP 150 V <0.1 Ω 10 A TO-220FP ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area. (1) Starting T j = 25 oC, ID = 15A, VDD = 75V (2) ISD ≤35A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX. Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 150 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 150 V VGS Gate- source Voltage ± 15 V ID Drain Current (continuous) at TC = 25°C 10 A ID Drain Current (continuous) at TC = 100°C 7A IDM (•) Drain Current (pulsed) 40 A Ptot Total Dissipation at TC = 25°C 30 W Derating Factor 0.2 W/°C EAS (1) Single Pulse Avalanche Energy 300 mJ dv/dt (2) Peak Diode Recovery voltage slope 2.4 V/ns Tstg Storage Temperature -55 to 175 °CTj Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (1) DYNAMIC Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 62.5 300 °C/W °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 150 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 15V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA 123V R DS(on) Static Drain-source On Resistance VGS = 10 V I D = 5 A VGS = 5 V I D = 5 A 0.085 0.1 0.1 0.112 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS = 20 V I D =7 A 6S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V, f = 1 MHz, VGS = 0 1080 170 105 pF pF pF

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 75 V I D = 5 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, Figure 1) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =120V ID =10A V GS =5V (see test circuit, Figure 2) 7.5 54 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(off) tf Turn-off Delay Time Fall Time VDD = 75 V I D = 5 A R G = 4.7Ω, V GS = 5 V (Resistive Load, Figure 1) ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V clamp = 120 V I D = 10 A R G = 4.7Ω, V GS = 4.5 V (Inductive Load, Figure 3) ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit I SD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A VSD (*) Forward On Voltage ISD = 10 A V GS = 0 1.3 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10 A di/dt = 100A/µs Vr = 30 V T j = 150°C (Inductive Load, Figure 3) 160 950 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance

Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . .

Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour Fig. 1: Switching Times Test Circuits For Resistive Load

DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G ¯ F 123F2 TO-220FP MECHANICAL DATA

DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.009 0.106 C 1 1.4 0.039 0.055 D 2.4 2.75 0.094 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.029 0.039 F1 1.15 1.7 0.045 0.066 F2 1.15 1.7 0.045 0.066 G 4.68 5.48 0.184 0.215 G1 2.24 2.84 0.088 0.111 H 10 10.4 0.393 0.409 L1 18.4 19.2 0.724 0.755 L2 16 0.629 L3 29 30 1.14 1.18 L4 15.3 16.1 0.60 0.63 L5 3.4 0.133 L6 15.9 16.4 0.625 0.665 L7 9 9.3 0.354 0.366 L8 22.5 23.6 0.885 0.929 M 4.6 5.4 0.181 0.212 N 2.29 3.29 0.090 0.129 Dia 3 3.2 TO-220FP(023Y) MECHANICAL DATA

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