STP30N65DM6AG STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220 type A package information

Features

Order code VDS RDS(on) max. ID STP30N65DM6AG 650 V 115 mΩ 28 A

  • AEC-Q101 qualified
  • Fast-recovery body diode
  • Lower R DS(on) per area vs previous generation
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Applications

  • Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STP30N65DM6AG Product summary Order code STP30N65DM6AG Marking 30N65DM6 Package TO-220 Packing Tube Automotive-grade N-channel 650 V, 102 mΩ typ., 28 A MDmesh DM6 Power MOSFET in a TO-220 package STP30N65DM6AG Datasheet DS13373 - Rev 2 - June 2021 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified Table 4. On/off-state

  1. Defined by design, not subject to production test.

Table 5. Dynamic

  1. C oss eq. is defined as the constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times Figure 18. Switching time waveform)

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical drain-source on-resistance Figure 6. Typical gate charge characteristics

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220 type A package information

Figure 19. TO-220 type A package outline

Package information

Table 8. TO-220 type A package mechanical data