STP30N10F7 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220 type A package information
  • 5 Revision history

Features

Order code VDS RDS(on) max. ID PTOT STP30N10F7 100 V 0.024 Ω 32 A 50 W  Among the lowest R DS(on) on the market  Excellent figure of merit (FOM )  Low C rss /Ciss ratio for EMI immunity  High avalanche ruggedness

Applications

 Switching applications

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STP30N10F7 30N10F7 TO-220 Tube AM01475v1_ Tab D(2, TAB) G(1) S(3)

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 32 A ID Drain current (continuous) at TC = 100 °C 23 A IDM (1) Drain current (pulsed) 132 A PTOT Total dissipation at TC = 25 °C 50 W TJ Operating junction temperature range -55 to 175 °C Tstg Storage temperature range Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 3 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W

2 Electrical characteristics

(TC = 25 °C unless otherwise specified) Table 4: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID= 250 µA 100 V IDSS Zero gate voltage drain current VGS= 0 V, VDS=100 V 1 µA VGS= 0 V, VDS=100 V,TC= 125 °C 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = +20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 2.5 4.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 16 A 0.02 0.024 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 50 V, f = 1 MHz,VGS= 0 V - 1270 - pF Coss Output capacitance - 290 - pF Crss Reverse transfer capacitance - 24 - pF Qg Total gate charge VDD = 50 V, ID = 32 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") - 19 - nC Qgs Gate-source charge - 9 - nC Qgd Gate-drain charge - 4.5 - nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 50 V, ID =16 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times") - 12 - ns tr Rise time - 17.5 - ns td(off) Turn-off delay time - 22 - ns tf Fall time - 5.6 - ns

Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage ISD = 32 A, VGS = 0 V - 1.1 V trr Reverse recovery time ISD = 32 A, di/dt = 100 A/µs VDD= 80 V, TJ= 150 °C, Figure 15: "Test circuit for inductive load switching and diode recovery times" - 41 ns Qrr Reverse recovery charge - 47 nC IRRM Reverse recovery current - 2.3 A Notes: (1)Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics ID 0.1 0.1 1 VDS(V)10 (A) 100µs 1ms 10ms 0.01 Tj=175°C T c=25°C Single pulse

100 Operation in this area is

limited by RDS(on) d 0.05 0.02 0.01 0.1 0.2

Figure 12: Source-drain diode forward characteristics

3 Test circuits

Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 TO-220 type A package information

Figure 19: TO-220 type A package outline

Table 8: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95

5 Revision history

Table 9: Document revision history Date Revision Changes 01-Feb-2016 1 First release.