STP25NM60N

STP25NM60N STMICROELECTRONICS | Alldatasheet

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STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N Table 3: Absolute Maximum ratings (*) Limited only by maximum temperature allowed (1) Pulse width limited by safe operating area (2) ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS . Table 4: Thermal Data Table 5: Avalanche Characteristics ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off (2) Characteristic value at turn off on inductive load Symbol Parameter Value Unit TO-220/I²PAK TO-247/D²PAK TO-220FP VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ )6 0 0 V VGS Gate- source Voltage ± 25 V ID Drain Current (continuous) at TC = 25°C 20 20 (*) A ID Drain Current (continuous) at TC = 100°C 12.8 12.8 (*) A IDM (1) Drain Current (pulsed) 80 80 (*) A PTOT Total Dissipation at TC = 25°C 160 40 W Derating Factor 1.28 0.32 W/ °C dv/dt (2) Peak Diode Recovery voltage slope TBD V/ns Tstg Storage Temperature – 55 to 150 °C Tj Max. Operating Junction Temperature 150 °C TO-220/I²PAK TO-247/D²PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAS Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) TBD A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAS , VDD = 50 V) TBD mJ Symbol Parameter Test Conditions Value Unit Min. Typ. Max. V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 600 V dv/dt(2) Drain Source Voltage Slope Vdd=TBD, Id=TBD, Vgs=TBD TBD V/ns IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate Threshold VoltageVDS = VGS , ID = 250 µA 2 3 4V R DS(on Static Drain-source On Resistance VGS = 10 V, ID = 10 A 0.140 0.170 Ω

STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Table 8: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS . Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance V DS = 15V , ID = 10A 17 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 2565 511 pF pF pF C OSS eq (3). Equivalent Output Capacitance VGS = 0 V, VDS = 0 to 480 V TBD pF R G Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 2 Ω t d(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time V DD = 300 V, ID = 10 A, R G = 4.7 Ω, VGS = 10 V (see Figure 4) TBD TBD TBD TBD ns ns ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V, ID = 20 A, VGS = 10 V (see Figure 7) TBD TBD nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) A A VSD (1) Forward On Voltage ISD = 20 A, VGS = 0 1.3 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 25 A, di/dt = 100 A/µs VDD = 100V (see Figure 5) TBD TBD TBD ns µC A t rr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 25 A, di/dt = 100 A/µs VDD = 100V, Tj = 150°C (see Figure 5) TBD TBD TBD ns µC A

STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N A B D E H G F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA

STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N DIM. mm. inch A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 TO-262 (I2PAK) MECHANICAL DATA

STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N DIM. mm. inch A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e5 . 4 5 0 . 2 1 4 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S5 . 5 0 0 . 2 1 6 TO-247 MECHANICAL DATA

STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N DIM. mm inch A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0 o 8o 0o 0o P032P_B TO-252 (DPAK) MECHANICAL DATA

STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N TAPE AND REEL SHIPMENT D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N Table 9: Revision History Date Revision Description of Changes 30-Nov-2004 1 First Release. 22-Mar-2005 2 Modified title 23-May-2005 3 Inserted some values in Tab7 08-Jun-2005 4 Inserted new row in table 6

STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America