STP25N018M9 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220 type A package information
Features
Order code VDS RDS(on) max. ID STP25N018M9 250 V 18 mΩ 56 A
- Very low FOM (RDS(on)·Qg)
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested Application
- AC-DC converters
- DC-DC converters
- Microinverter
Description
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. 1 2 3 TO-220 TAB AM01475v1_noZen D(2, TAB) G(1) S(3) Product status link STP25N018M9 Product summary Order code STP25N018M9 Marking 25N018M9 Package TO‑220 Packing Tube N-channel 250 V, 15 mΩ typ., 56 A MDmesh M9 Power MOSFET in a TO‑220 package STP25N018M9 Datasheet DS14761 - Rev 2 - January 2025 For further information, contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On-/off-states
- Specified by design, not tested in production.
Table 5. Dynamic
- Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical capacitance characteristics
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220 type A package information
Figure 19. TO-220 type A package outline
Package information
Table 8. TO-220 type A package mechanical data
Revision history
Table 9. Document revision history 20-Aug-2024 1 First release. Updated Features and Application on cover page. capacitance characteristics. Updated Section 3: Test circuits.
IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2025 STMicroelectronics – All rights reserved STP25N018M9 DS14761 - Rev 2 page 12/12