STF24NM60N STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance

Applications

■ Switching applications

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited only by maximu m temperature allowed.
  2. Pulse width limited by safe operating area.
  3. I SD ≤ 17 A, di/dt ≤ 400 A/µs, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS

Table 3. Thermal data Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On /off states Table 6. Dynamic

  1. C o(eff). is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS.

Table 7. Switching times Table 8. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characterist ics (curves)

Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP Figure 4. Safe operating area for I 2PAK and Figure 5. Thermal impedance for I 2PAK and Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs Figure 16. Normalized B VDSS vs temperature Figure 17. Source-drain diode forward

1.4 TJ=-50°C

3 Test circuits

Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test Figure 22. Unclamped inductive wavefo rm Figure 23. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Figure 24. TO-220FP drawing Table 9. TO-220FP mechanical data

Table 10. I²PAK (TO-262) mechanical data

Figure 25. I²PAK (TO-262) drawing

Table 11. TO-220 type A mechanical data

Figure 26. TO-220 type A drawing

Table 12. TO-247 mechanical data

Figure 27. TO-247 drawing

5 Revision history

Table 13. Document revision history 05-Jan-2011 1 First release. – Added new package and mechanical data: TO-247.