STP24NF10 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL 100V - 0.07Ω - 24A TO-220 LOW GATE CHARGE STripFET  POWER MOSFET PRELIMINARY DATA n TYPICAL RDS(on) = 0.07Ω n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED n APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

APPLICATIONS

n HIGH-EFFICIENCY DC-DC CONVERTERS n UPS AND MOTOR CONTROL INTERNAL SCHEMATIC DIAGRAM April 2000 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 100 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 100 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc =2 5 oC2 4 A ID Drain Current (continuous) at Tc = 100 oC1 5 A IDM (•) Drain Current (pulsed) 96 A P tot Total Dissipation at Tc =2 5 oC8 0 W Derating Factor 0.53 W/ oC dv/dt(1 ) Peak Diode Recovery voltage slope 9 V/ns E AS (2) Single Pulse Avalanche Energy 75 mJ Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area ( 2) starting Tj =2 5oC, ID =24A , VDD = 50V (1) I SD ≤ 24 A, di/dt≤ 300A/µs, VDD ≤ V(BR)DSS,Tj≤ TJMA TYPE V DSS R DS(on) ID STP24NF10 100 V < 0.077 Ω 24 A TO-220

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.87 62.5 300 oC/W oC/W oC ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS = 0 100 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c =125 oC µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID = 250 µ A 234V R DS(on) Static Drain-source On Resistance V GS =1 0V I D = 12 A 0.07 0.077 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on )max V GS =1 0V 24 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID =12 A 20 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 870 125 pF pF pF STP24NF10

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time V DD =5 0V I D =1 2A R G =4 . 7 Ω V GS =1 0V (Resistive Load, see fig. 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =8 0V I D =2 4A V GS =1 0V 3 0 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time V DD =2 7V I D =1 2A R G =4 . 7 Ω V GS =1 0V (Resistive Load, see fig. 3) ns ns td(off) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 80 V I D =2 4A R G =4 . 7 Ω V GS =1 0V (Inductive Load, see fig. 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗)F o r w a r d O n V o l t a g e ISD =2 4A V GS =0 1 . 5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 24 A di/dt = 100 A/ µ s V DD =5 0V T j =1 5 0oC (see test circuit, fig. 5) 100 375 7.5 ns nC A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operatingarea STP24NF10

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP24NF10

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP24NF10

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com STP24NF10