STP24N60M2 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Packaging mechanical data
  • 6 Revision history

Features

  • Extremely low gate charge
  • Lower RDS(on) x area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications

Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q g. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. D(2, TAB) G(1) S(3) AM01476v1 D2PAK TO-220 TO-247 I2PAK TAB TAB 1 2 3 TAB Order codes V DS @ TJmax RDS(on) max I D STB24N60M2 650 V 0.19 Ω 18 A STI24N60M2 STP24N60M2 STW24N60M2 Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Pulse width limited by safe operating area.

Table 3. Thermal data

  1. When mounted on 1 inch² FR-4, 2 Oz copper board

Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On /off states Table 6. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS

Table 7. Switching times

Table 8. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for D2PAK, I2PAK Figure 3. Thermal impedance D2PAK, I2PAK and Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 Figure 6. Output characteristics Figure 7. Transfer characteristics

Figure 14. Source-drain diode forward Figure 15. Normalized BVDSS vs temperature

1.2 TJ=-50°C

3 Test circuits

Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Table 9. D²PAK (TO-263) mechanical data

Table 10. I²PAK (TO-262) mechanical data

Figure 24. I²PAK (TO-262) drawing

Table 11. TO-220 type A mechanical data

Figure 25. TO-220 type A drawing

Table 12. TO-247 mechanical data

Figure 26. TO-247 drawing

5 Packaging mechanical data

Table 13. D²PAK (TO-263) tape and reel mechanical data

6 Revision history

Table 14. Document revision history 10-Dec-2012 1 First release.