STP23N80K5 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220 package information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID PTOT STP23N80K5 800 V 0.28 Ω 16 A 190 W Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STP23N80K5 23N80K5 TO-220 Tube
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±30 V ID Drain current (continuous) at Tcase = 25 °C 16 A Drain current (continuous) at Tcase = 100 °C 10 IDM(1) Drain current (pulsed) 64 A PTOT Total dissipation at Tcase = 25 °C 190 W dv/dt(2) Peak diode recovery voltage slope 4.5 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 16 A, di/dt=100 A/μs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS. (3) VDS ≤ 640 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.66 °C/W Rthj-amb Thermal resistance junction-ambient 30 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR(1) Avalanche current, repetitive or not repetitive 5 A EAS(2) Single pulse avalanche energy 400 mJ Notes: (1) Pulse width limited by Tjmax. (2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 800 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 800 V µA VGS = 0 V, VDS = 800 V, Tcase = 125 °C IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 8 A 0.23 0.28 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 1000 - pF Coss Output capacitance - 65 - Crss Reverse transfer capacitance - 1.5 - CO(tr)(1) Equivalent output capacitance VDS = 0 to 640 V, VGS = 0 V - 165 - pF CO(er)(2) Equivalent output capacitance VDS = 0 to 640 V, VGS = 0 V - 59 - RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4.7 - Ω Qg Total gate charge VDD = 640 V, ID = 16 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") - 33 - nC Qgs Gate-source charge - 6 - Qgd Gate-drain charge - 25 - Notes: (1) Time related is defined as a constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0 to 80% VDSS. (2) Energy related is defined as a constant equivalent capacitance giving the same stored energy as COSS when VDS increases from 0 to 80% VDSS Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 8 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 14 - ns tr Rise time - 9 - td(off) Turn-off delay time - 48 - tf Fall time - 9 -
Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 16 A ISDM(1) Source-drain current (pulsed) 64 A VSD(2) Forward on voltage VGS = 0 V, ISD = 16 A - 1.5 V trr Reverse recovery time ISD = 16 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 410 ns Qrr Reverse recovery charge - 7 µC IRRM Reverse recovery current - 34 A trr Reverse recovery time ISD = 16 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 650 ns Qrr Reverse recovery charge - 10 µC IRRM Reverse recovery current - 32 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±1 mA, ID = 0 A ±30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance K tp Ƭ Zth= K*Rthj-c δ= tp/Ƭ Single pulse 0.01 δ=0.5 10-1 10-2 10-410-5 10-3 10-2 10-1 tP(s) 0.2 0.1 0.05 0.02
3 Test circuits
Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220 package information
Figure 19: TO-220 type A package outline
Table 10: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95
5 Revision history
Table 11: Document revision history Date Revision Changes 06-Oct-2015 1 First release.