STP2301 DGNJDZ | Alldatasheet

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-20V/-3.0A, RDS(ON) =80m (typ.)@VGS =-4.5V -20V/-2.0A, RDS(ON) =110m (typ.)@VGS =-2.5V Super high density cell design for extremely low Gate Charge Exceptional on-resistance and Maximum DC current capability Power Management in Note book Portable Equipment Networking DC-DC Power System Load Switch S D G SOT-23 Top View The STP2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent R DS(ON). .low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general applications. STP2301S-TRG ROHS Compliant This is Halogen Free Drain Source Gate ST P 2301 S - TR G a b c d e f a : Company name. b : Channel type. c : Product Serial number. d : Package Code e : Handling Code f: Lead Plating Code G : Lead-free product. This product is Halogen Free -20V P-Channel Enhancement Mode MOSFET

Part Number Package Code Handling Code Shipping STP2301S-TRG S : SOT-23 TR : Tape&Reel 3K/Reel Year Code : 0 ~ 9, 2010 : 0 Week Code : A(1~2) ~ Z(53~54) SOT-23 : Only available in tape and reel packaging. Symbol Parameter Typical Unit VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 V Continuous Drain Current (TC=25°C) A -3.0 A ID Continuous Drain Current (TC=70°C) A VGS=-10V -2.8 A IDM Pulsed Drain Current B -10 A PD Power Dissipation TA=25°C TA=70°C 1.25 0.8 W TJ Operation Junction Temperature -55 to150 °C TSTG Storage Temperature Range -55 to150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Symbol Parameter Typ Max Unit R JA Thermal Resistance-Junction to Ambient A Steady-State - 125 °C/W R JC Thermal Resistance Junction to LeadA Steady-State - 85 °C/W

Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage V GS=0V,ID=-250 A -20 V VGS(th) Gate Threshold Voltage V DS=VGS,ID=-250 A -0.5 -1.2 V IGSS Gate Leakage Current V DS=0V,VGS=±12V ±100 nA VDS=-20V,VGS=0V, TJ=25°C -1 IDSS Zero Gate Voltage Drain Current VDS=-20V,VGS=0V, TJ=55°C -5 A RDS(ON) Drain-source On-Resistance B VGS=-4.5V,ID=-3.0A VGS=-2.5V,ID=-2.0A 110 130 m Gfs Forward Transconductance V DS=-5V,ID=-3.0A 7.5 S Source-Drain Doide VSD Diode Forward Voltage I S=-1.0A,VGS=0V -0.7 -1.2 V IS Continuous Source Current AD -6 A Dynamic Parameters Qg Total Gate Charge 9.4 Qgs Gate-Source Charge 1.2 Qgd Gate-Drain Charge VDS=-12V VGS=-4.5V ID -3.0A 3.5 nC Ciss Input Capacitance 521 Coss Output Capacitance 81 Crss Reverse Transfer Capacitance VDS=-10V VGS=0V f=1MHz 56 pF td(on) 7.2 tr Turn-On Time td(off) 21 tf Turn-Off Time VDD=-12V ID=-1A VGEN=-4.5V RG=3.3 nS Note: A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 B. The data tested by pulsed , pulse width 300uS , duty cycle D. The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation.

DS-Drain Source Voltage(V) VGS=-1.8V VGS=-2.5V VGS=-3.0V VGS=-4.5V VGS=-5.0V -6V -8V -10V Drain-Source On Resistance 100 120 140 160 180 200 0 1 2 3 4 5 6 7 8 9 10 GS-Gate Source Voltage(V) ID=-3A 125 Drain Source On Resistance 110 130 150 170 190 210 0 2 4 6 8 10 D-Drain Current(A) VGS=2.5V VGS=4.5V Drain Source On Resistance 0 0.3 0.6 0.9 1.2 -VSD-Source Drain Voltage(V) TJ=150°C TJ=25°C Gate Charge 1.5 4.5 0 2 4 6 8 10 -QG-Gate Charge(nC) VDS=-10V ID=-3A Drain Source On Resistance 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 TJ-Junction Temperature(°C) VGS=-4.5V ID=-3A

-VDS-Drain Source Voltage(V) Coss Ciss Crss Power Dissipation 0.2 0.4 0.6 0.8 1.2 1.4 0 20 40 60 80 100 120 140 160 TJ-Junction Temperature(°C) Thermal Transient Impedance 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(Sec) Single Pulse Source Drain Diode Forward 0.1 -VSD-Source Drain Voltage(V) 25°C125°C Drain Current 0.5 1.5 2.5 3.5 4.5 0 20 40 60 80 100 120 140 160 TJ-Junction Temperature(°C)

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