STP22NS25Z

STP22NS25Z STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 250V - 0.13Ω - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY™ MOSFET (1) ISD ≤22A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX. INTERNAL SCHEMATIC DIAGRAM ■ TYPICAL R DS (on) = 0.13 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Company’s proprietary edge termina- tion structure, makes it suitable in coverters for lighting applications.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP22NS25Z STB22NS25Z 250 V 250 V < 0.15 Ω < 0.15 Ω 22 A 22 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 250 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 250 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 22 A ID Drain Current (continuos) at TC = 100°C 13.9 A IDM (/c108 ) Drain Current (pulsed) 88 A PTOT Total Dissipation at TC = 25°C 135 W Derating Factor 1.07 W/°C V ESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2500 V dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns Tstg Storage Temperature –55 to 150 °C Tj Max. Operating Junction Temperature TO-220 3 1 D 2PAK

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 0.93 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 22 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 50 V, Rg = 47 Ohm) 350 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 250 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 10 µA VDS = Max Rating, TC = 125 °C 100 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±18V ±10 µA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250µA 234V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 11 A 0.13 0.15 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance V DS > ID(on) x RDS(on)max, ID =1 1 A 22 S C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 2400 pF C oss Output Capacitance 340 pF C rss Reverse Transfer Capacitance 120 pF

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE GATE-SOURCE ZENER DIODE Note: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 125 V, ID = 11 A R G = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 20 ns tr Rise Time 30 ns Q g Total Gate Charge VDD = 200V, ID = 20 A, VGS = 10V 108 151 nC Q gs Gate-Source Charge 11 nC Q gd Gate-Drain Charge 40 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(Voff) tf Turn-off- Delay Time Fall Time VDD = 125V, ID = 11 A, R G =4 . 7Ω, VGS = 10V (see test circuit, Figure 3) 100 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 200V, ID = 22 A, R G =4 . 7Ω, VGS = 10V (see test circuit, Figure 5) 110 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 22 A ISDM (2) Source-drain Current (pulsed) 88 A VSD (1) Forward On Voltage ISD = 22 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 22 A, di/dt = 100A/µs VDD = 50V, Tj = 150°C (see test circuit, Figure 5) 292 ns Q rr Reverse Recovery Charge 3065 nC IRRM Reverse Recovery Current 21 A Symbol Parameter Test Conditions Min. Typ. Max. Unit BV GSO Gate-Source Breakdown Voltage Igs=± 500µA (Open Drain) 20 V

Transconductance Static Drain-source On Resistance Transfer CharacteristicsOutput Characteristics Thermal Impedance Safe Operating Area

Normalized Gate Thereshold Voltage vs Temp. Capacitance Variations Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Gate Charge vs Gate-source Voltage

Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

DIM. mm. inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0 º8 º D 2PAK MECHANICAL DATA

TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

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