STP22NM50 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 500V - 0.16Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh™Power MOSFET ■ TYPICAL R DS (on) = 0.16Ω ■ HIGH dv/dt AND AVALANCHE CAPABILITIES ■ 100% AVALANCHE TESTED ■ LOW INPUT CAPACITANCE AND GATE CHARGE ■ LOW GATE INPUT RESISTANCE

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET tech- nology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resis- tance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s propri- etary strip technique yields overall dynamic perfor- mance that is significantly better than that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing sys- tem miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE V DSS R DS(on) R ds(on)*Qg ID STP22NM50 STP22NM50FP STB22NM50 STB22NM50-1 500 V 500 V 500 V 500 V <0.215Ω <0.215Ω <0.215Ω <0.215Ω 6.4Ω *nC 6.4Ω *nC 6.4Ω *nC 6.4Ω *nC 20 A 20 A 20 A 20 A Symbol Parameter Value Unit STP(B)22NM50(-1) STP22NM50FP V DS Drain-source Voltage (VGS =0 ) 500 V VDGR Drain-gate Voltage (RGS =2 0kΩ ) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 20 20(*) A ID Drain Current (continuous) at TC = 100°C 12.6 12.6(*) A IDM (● ) Drain Current (pulsed) 80 80(*) A PTOT Total Dissipation at TC = 25°C 192 45 W Derating Factor 1.2 0.36 W/°C dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns VISO Insulation Winthstand Voltage (DC) -- 2000 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤20A, di/dt≤400A/µs, VDD ≤ V(BR)DSS ,Tj≤ TJMAX. (*)Limited only by maximum temperature allowed TO-220 TO-220FP 1 2 3 I²PAK (Tabless TO-220) D 2PAK INTERNAL SCHEMATIC DIAGRAM

STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1 THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq.is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS . TO-220/I2PAK/ D 2PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) 10 A EAS Single Pulse Avalanche Energy (starting Tj= 25 °C, ID = 5 A, VDD =5 0V ) 650 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) VDS = Max Rating 1µ A V DS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS =0 ) VGS = ±30V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =V GS ,ID = 250µA 345 V R DS(on) Static Drain-source On Resistance VGS =1 0 V ,ID = 10A 0.16 0.215 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance V DS >ID(on)xR DS(on)max, ID = 10A 10 S C iss Input Capacitance VDS =2 5 V ,f=1M H z ,VGS =0 1480 pF C oss Output Capacitance 285 pF C rss Reverse Transfer Capacitance 34 pF C oss eq.(2) Equivalent Output Capacitance VGS =0 V ,VDS = 0V to 400V 130 pF R g Gate Input Resistance f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain 1.6 Ω

STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =2 5 0V ,ID =1 0A R G = 4.7Ω VGS =1 0V (see test circuit, Figure 3) 24 ns tr Rise Time 16 ns Q g Total Gate Charge VDD =4 0 0V ,ID =2 0A , VGS =1 0V 40 56 nC Q gs Gate-Source Charge 13 nC Q gd Gate-Drain Charge 19 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 400 V, ID =2 0A , R G =4 . 7Ω, VGS =1 0V (see test circuit, Figure 5) 9n s tf Fall Time 8.5 ns tc Cross-over Time 23 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 20 A ISDM (2) Source-drain Current (pulsed) 80 A VSD (1) Forward On Voltage ISD =2 0A ,VGS =0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 20 A, di/dt = 100A/µs, VDD =1 0 0V ,Tj=2 5 ° C (see test circuit, Figure 5) 350 4.6 ns µC A trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, di/dt = 100A/µs, VDD =1 0 0V ,Tj=1 5 0 ° C (see test circuit, Figure 5) 435 5.9 ns µC A

STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1 Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4:Gate Charge test Circuit Fig. 2:Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load

STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1 DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1 DIM. mm. inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 8º D 2PAK MECHANICAL DATA

STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1 DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G ¯ F 123F2 TO-220FP MECHANICAL DATA

STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1 DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 L B D E A CA1 e P011P5/E TO-262 (I2PAK) MECHANICAL DATA

STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1 TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com