STP22NF03L

STP22NF03L STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 30V - 0.038Ω - 22A TO-220 STripFET™ POWER MOSFET (1) ISD ≤10A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX. (2) Starting Tj=25°C, ID =11A, VDD =15V ■ TYPICAL R DS (on) = 0.038Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ LOW GATE CHARGE AT 100 °C ■ APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of STMi- croelectronics unique “Single Feature Size™” strip- based process. The resulting transistor shows ex- tremely high packing density for low on-resistance, rugged avalance characteristics and less critical align- ment steps therefore a remarkable manufacturing re- producibility.

APPLICATIONS

■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS (● ) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STP22NF03L 30V <0.05 Ω 22A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 30 V VGS Gate- source Voltage ±15 V ID Drain Current (continuos) at TC = 25°C 22 A ID Drain Current (continuos) at TC = 100°C 16 A IDM (● ) Drain Current (pulsed) 88 A PTOT Total Dissipation at TC = 25°C 45 W Derating Factor 0.3 W/°C dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns EAS (2) Single Pulse Avalanche Energy 200 mJ Tstg Storage Temperature –65 to 175 °C Tj Max. Operating Junction Temperature 175 °C TO-220 INTERNAL SCHEMATIC DIAGRAM

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 3.33 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 30 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250µA 1V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 11 A 0.038 0.05 Ω VGS = 5 V, ID = 11 A 0.045 0.06 ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS =1 0 V 22 A Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, ID =11A 7S C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 330 pF C oss Output Capacitance 90 pF C rss Reverse Transfer Capacitance 40 pF

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 15V, ID = 11A R G = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) 11 ns tr Rise Time 100 ns Q g Total Gate Charge VDD = 24V, ID = 22A, VGS = 10V 6.5 9 nC Q gs Gate-Source Charge 3.6 nC Q gd Gate-Drain Charge 2 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) Turn-off-Delay Time VDD = 15V, ID = 11A, R G =4 . 7Ω, VGS = 4.5V (see test circuit, Figure 3) 25 ns tf Fall Time 22 ns tr(off) Off-voltage Rise Time Vclamp =24V, ID =22A R G =4 . 7Ω, VGS = 4.5V 22 ns tf Fall Time (see test circuit, Figure 5) 55 ns tc Cross-over Time 75 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 22 A ISDM (1) Source-drain Current (pulsed) 88 A VSD (2) Forward On Voltage ISD = 22A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 22A, di/dt = 100A/µs, VDD = 15V, Tj = 150°C (see test circuit, Figure 5) 30 ns Q rr Reverse Recovery Charge 18 nC IRRM Reverse Recovery Current 1.2 A Safe Operating Area Thermal Impedence

Static Drain-source On Resistance Transfer Characteristics Transconductance Gate Charge vs Gate-source Voltage Capacitance Variations

Source-drain Diode Forward Characteristics Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

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