STP22NE10L STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL 100V - 0.07Ω - 22A TO-220 STripFET POWER MOSFET n TYPICAL RDS(on) = 0.07Ω n LOW THRESHOLD DRIVE n LOGIC LEVEL DEVICE

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n MOTOR CONTROL, AUDIO AMPLIFIERS n DC-DC & DC-AC CONVERTERS INTERNAL SCHEMATIC DIAGRAM TYPE V DSS R DS(on) ID STP22NE10L 100 V < 0.085 Ω 22 A November 1999 TO-220 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 100 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 100 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc =2 5 oC2 2 A ID Drain Current (continuous) at Tc = 100 oC1 4 A IDM (•) Drain Current (pulsed) 88 A P tot Total Dissipation at Tc =2 5 oC9 0 W Derating Factor 0.6 W/ oC E AS (1) Single Pulse Avalanche Energy 250 mJ Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area ( 1) starting Tj =2 5oC, ID =22A , VDD = 50V

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.67 62.5 300 oC/W oC/W oC ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS = 0 100 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c =125 oC µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID = 250 µ A1 1 . 6 2 . 5 V R DS(on) Static Drain-source On Resistance V GS =1 0V I D =1 5A V GS =5V I D =1 5A 0.07 0.085 0.085 0.1 Ω Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on )max V GS =1 0V 22 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID =15 A 19 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 1750 165 pF pF pF STP22NE10L

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time V DD =5 0V I D =8A R G =4 . 7 Ω V GS =4 . 5V (Resistive Load, see fig. 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =8 0V I D =1 6A V GS =1 0V 2 4 31 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time V DD =5 0V I D =8A R G =4 . 7 Ω V GS =4 . 5V (Resistive Load, see fig. 3) ns ns td(off) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 80 V I D =1 6A R G =4 . 7 Ω V GS =4 . 5V (Inductive Load, see fig. 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗)F o r w a r d O n V o l t a g e ISD =1 6A V GS =0 1 . 5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 16 A di/dt = 100 A/ µ s V DD =4 0V T j =1 5 0oC (see test circuit, fig. 5) 100 300 ns nC A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STP22NE10L

Gate Charge vs Gate-sourceVoltage Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STP22NE10L

Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STP22NE10L

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP22NE10L

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP22NE10L

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