STB21NM50N STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 16
Technical content
STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1 N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET Table 1: General Features ■ 100% AVALANCHE TESTED ■ LOW INPUT CAPACITANCE AND GATE CHARGE ■ LOW GATE INPUT RESISTANCE
DESCRIPTION
The STx21NM50N is realized with the second generation of MDmesh Technology. This revolu- tionary MOSFET associates a new vertical struc- ture to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
APPLICATIONS
The MDmesh™ II family is very suitable for in- creasing power density of high voltage converters allowing system miniaturization and higher effi ciencies. Table 2: Order Codes Figure 1: Package Figure 2: Internal Schematic Diagram TYPE VDSS (@Tjmax) R DS(on) ID STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550 V 550 V 550 V 550 V 550 V < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω 18 A 18 A
18 A (*)
SALES TYPE MARKING PACKAGE PACKAGING STB21NM50N B21NM50N D 2PAK TAPE & REEL STB21NM50N-1 B21NM50N I2PAK TUBE STF21NM50N F21NM50N TO-220FP TUBE STP21NM50N P21NM50N TO-220 TUBE STW21NM50N W21NM50N TO-247 TUBE Rev. 3
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Table 3: Absolute Maximum ratings (/circle6 ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed (1) ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS Table 4: Thermal Data Table 5: Avalanche Characteristics Symbol Parameter Value Unit TO-220 / D2PAK / I2PAK / TO-247 TO-220FP VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 500 V VGS Gate- source Voltage ±25 V ID Drain Current (continuous) at TC = 25°C 18 18 (*) A ID Drain Current (continuous) at TC = 100°C 11 11 (*) A IDM (/circle6 ) Drain Current (pulsed) 72 72 (*) A PTOT Total Dissipation at TC = 25°C 140 30 W Derating Factor 1.12 0.23 W/°C dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns Viso Insulation Winthstand Voltage (DC) -- 2500 V Tstg Storage Temperature –55 to 150 150 °C Tj Max. Operating Junction Temperature TO-220 / D²PAK / I²PAK / TO-247 TO-220FP Rthj-case Thermal Resistance Junction-case Max 0.89 4.21 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAS Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 9 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 50 V) 480 mJ
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off (2) Characteristic value at turn off on inductive load Table 7: Dynamic (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 8: Source Drain Diode Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Symbol Parameter Test Conditions Value Unit Min. Typ. Max. V(BR)DSS Drain-source Breakdown Voltage ID = 1mA, VGS = 0 500 V dv/dt(2) Drain Source Voltage Slope Vdd=400V, Id=25A, Vgs=10V 44 V/ns IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125 °C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V 100 nA VGS(th) Gate Threshold VoltageVDS = VGS , ID = 250 µA 2 3 4 V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 9 A 0.150 0.190 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID = 9 A 12 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1950 420 pF pF pF C oss eq. (*) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 270 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Off-voltageRise Time Fall Time VDD =250 V, ID = 9 A R G = 4.7Ω VGS = 10 V (see Figure 18) ns ns ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400V, ID = 18 A, VGS = 10V, (see Figure 21) nC nC nC R g Gate Input Resistance f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain 1.6 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM Source-drain Current Source-drain Current (pulsed) A A VSD (1) Forward On Voltage ISD = 18 A, VGS = 0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 18 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25°C (see Figure 19) 360 ns µC A trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 18A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see Figure 19) 640 6.5 ns µC A
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N TAPE AND REEL SHIPMENT D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N TO-247 MECHANICAL DATA DIM. mm. inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R0 . 4 0 . 0 1 5 V2 0º 4º D 2PAK MECHANICAL DATA
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N DIM. mm. inch A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 TO-262 (I2PAK) MECHANICAL DATA
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N A B D E H G F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N DIM. mm. inch A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e5 . 4 5 0 . 2 1 4 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S5 . 5 0 0 . 2 1 6 TO-247 MECHANICAL DATA
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Table 9: Revision History Date Revision Description of Changes 07-Sep-2005 1 First Release. 28-Sep-2005 2 Symbol changed in Table 5 14-Oct-2005 3 Modified curves 5,8
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America