STF21N65M5 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Packaging mechanical data
  • 6 Revision history

Features

■ Worldwide best RDS(on) * area ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Application Switching applications

Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram

17 A 125 W

  1. Limited only by maximum temperature allowed

17 A 125 WSTP21N65M5

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited only by maximu m temperature allowed.
  2. Pulse width limited by safe operating area.

Table 3. Thermal data

2 Electrical characteristics

Table 4. On /off states Table 5. Dynamic

  1. C oss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS.

  1. C oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Coss when VDS increases from 0 to 80% VDSS.

Table 6. Switching times Table 7. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220, Figure 3. Thermal impedance for TO-220, Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

3 Test circuits

Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test Figure 23. Unclamped inductive wavefor m Figure 24. Switching time waveform

Package mechanical data STB/F/I/P/W21N65M5 10/22 Doc ID 15427 Rev 4

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Table 8. TO-220FP mechanical data Figure 25. TO-220FP drawing mechanical data

Figure 26. I²PAK (TO-262) drawing Table 9. I²PAK (TO-262) mechanical data

Table 10. TO-220 type A mechanical data

Figure 27. TO-220 type A drawing

Table 11. TO-247 mechanical data

Figure 28. TO-247 drawing

Table 12. D²PAK (TO-263) mechanical data

Figure 29. D²PAK (TO-263) drawing

5 Packaging mechanical data

Figure 30. D²PAK footprint (a) Table 13. D²PAK (TO-263) tape and reel mechanical data

6 Revision history

Table 14. Document revision history 27-Feb-2009 2 Corrected package information on first page. 11-Nov-2009 3 Document status promoted from preliminary data to datasheet. Figure 11: Static drain-source on resistance).