STP210NF02

STP210NF02 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 20V - 0.0026 Ω - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET ■ TYPICAL R DS (on) = 0.0026Ω ■ STANDARD THRESHOLD DRIVE ■ 100% AVALANCHE TESTED

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip- based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS TYPE VDSS R DS(on) ID STB210NF02/-1 STP210NF02 20 V 20 V <0.0032 Ω <0.0032 Ω

120 A(**)

D ²PAK TO-263 I²PAK TO-262 INTERNAL SCHEMATIC DIAGRAM

Ordering Information

(•) Pulse width limited by safe operating area. () Current Limited by Package (1) ISD ≤120A, di/dt ≤250A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 60 A, VDD = 14 V SALES TYPE MARKING PACKAGE PACKAGING STB210NF02 B210NF02 D 2PAK TUBE STB210NF02T4 B210NF02 D 2PAK TAPE & REEL STP210NF02 P210NF02 TO-220 TUBE STB210NF02-1 B210NF02 I2PAK TUBE Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 20 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 20 V VGS Gate- source Voltage ± 20 V ID () Drain Current (continuous) at TC = 25°C 120 A ID Drain Current (continuous) at TC = 100°C 120 A IDM (•) Drain Current (pulsed) 480 A Ptot Total Dissipation at TC = 25°C 300 W Derating Factor 2.0 W/°C dv/dt (1) Peak Diode Recovery voltage slope 1 V/ns EAS (2) Single Pulse Avalanche Energy 2.3 J Tstg Storage Temperature -55 to 175 °CTj Operating Junction Temperature

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC Rthj-case Rthj-amb Rthj-pcb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Junction-pcb Maximum Lead Temperature For Soldering Purpose (for 10 sec. 1.6 mm from case) Max Max Max Typ 0.5 62.5 see curve on page 6 300 °C/W °C/W °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA V GS = 0 20 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA 24 V R DS(on) Static Drain-source On Resistance VGS = 10 V I D = 50 A 2.6 3.2 m Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS = 10 V I D = 50 A 130 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 15V, f = 1 MHz, VGS = 0 5100 3500 800 pF pF pF

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 10 V I D = 60 A R G = 4.7 Ω V GS = 10 V (Resistive Load, Figure 3) 360 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =10V ID =120A VGS =10V 125 150 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(off) tf Turn-off Delay Time Fall Time VDD = 10 V I D = 60 A R G = 4.7Ω, V GS = 10 V (Resistive Load, Figure 3) 110 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 120 480 A A VSD (*) Forward On Voltage ISD = 120 A V GS = 0 1.3 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A di/dt = 100A/µs VDD = 15 V T j = 150°C (see test circuit, Figure 5) 120 3.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance

Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations

. . Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. Power Derating vs Tc Max Id Current vs Tc

Thermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area Allowable Iav vs. Time in Avalanche The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV ) EAS(AR) = PD(AVE) * tAV Where: I AV is the Allowable Current in Avalanche PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse) tAV is the Time in Avalanche To derate above 25 oC, at fixed IAV , the following equation must be applied: IAV = 2 * (Tjmax - TCASE )/ (1.3 * BVDSS * Zth) Where: Z th = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .

CTHERM1 5 - 4 0.011 CTHERM2 4 - 3 0.0012 CTHERM3 3 - 2 0.05 CTHERM4 2 - 1 0.1 RTHERM1 5 - 4 0.09 RTHERM2 4 - 3 0.02 RTHERM3 3 - 2 0.11 RTHERM4 2 - 1 0.17 SPICE THERMAL MODEL

Fig. 4.1: Gate Charge Test Waveform Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 3.1: Switching Time Waveform Fig. 4: Gate Charge Test Circuit

Fig. 5: Diode Switching Test Circuit Fig. 5.1: Diode Recovery Times Waveform

DIM. mm. inch. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.394 0.409 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 R 0.4 0.016 V2 0° 8° 0° 8° D ²PAK MECHANICAL DATA

DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 L B D E A CA1 e P011P5/E TO-262 (I2PAK) MECHANICAL DATA

DIM. mm. inch. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.40 0.645 L3 28.90 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 TO-220 MECHANICAL DATA

DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R5 0 1 . 5 7 4 W 23.7 24.3 0.933 0.956 DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA * on sales type TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* D 2PAK FOOTPRINT TAPE MECHANICAL DATA

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