STF20NM65N STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristecs (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ 100 % avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications

Description

These devices are N-channel Power MOSFETs realized using the second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited only by maximu m temperature allowed.
  2. Pulse width limited by safe operating area.

Table 3. Thermal data Table 4. Avalanche characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified). Table 5. On/off states Table 6. Dynamic

  1. C oss eq: defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80 % VDSS. Table 7. Switching times

Table 8. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.

2.1 Electrical characterist ecs (curves)

Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics

Figure 8. Normalized B VDSS vs temperature Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs

1.07 ID=1mA

Figure 14. Source-drain diode forward

3 Test circuits

Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test Figure 19. Unclamped inductive wavefo rm Figure 20. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Table 9. TO-220 type A mechanical data

Figure 21. TO-220 type A drawing

Table 10. TO-220FP mechanical data

Figure 22. TO-220FP drawing

5 Revision history

Table 11. Revision history 12-Sep-2007 1 Initial release. 23-May-2011 2 Updated Chapter 4: Package mechanical data.