STP20NM60A

STB20NM60A-1 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 650V@Tjmax - 0.25Ω - 20A I²PAK/TO-220/TO-220FP MDmesh™MOSFET 1 2 3 TO-220 TO-220FP I²PAK I TYPICAL RDS(on) = 0.25Ω I HIGH dv/dt I LOW INPUT CAPACITANCE AND GATE CHARGE I LOW GATE INPUT RESISTANCE

DESCRIPTION

The MDmesh™is a new revolutionary MOSFET tech- nology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resis- tance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s propri- etary strip technique yields overall dynamic perfor- mance that is significantly better than that of similar competition’s products.

APPLICATIONS

I SPECIFICALLY DESIGNED FOR ADAPTORS IN QUASI-RESONANT CONFIGURATION ORDER CODES TYPE VDSS @Tjmax RDS(on) ID STB20NM60A-1 STP20NM60A STF20NM60A 650 V 650 V 650 V < 0.29 Ω < 0.29 Ω < 0.29 Ω 20 A 20 A 20 A PART NUMBER MARKING PACKAGE PACKAGING STB20NM60A-1 B20NM60A I2PAK TUBE STP20NM60A P20NM60A TO-220 TUBE STF20NM60A F20NM60A TO-220FP TUBE INTERNAL SCHEMATIC DIAGRAM

STB20NM60A-1/STP20NM60A/STF20NM60A ABSOLUTE MAXIMUM RATINGS () Pulse width limited by safe operating area (1) ISD ≤ 20A, di/dt ≤ 400 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Value Unit STB20NM60A-1 STP20NM60A STF20NM60A VGS Gate-source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 20(*) A ID Drain Current (continuous) at TC = 100°C 12.6 12.6(*) A IDM () Drain Current (pulsed) 80(*) A PTOT Total Dissipation at TC = 25°C 192 W Derating Factor 1.2 0.36 W/°C dv/dt (1) Peak Diode Recovery voltage slope V/ns VISO Insulation Winthstand Voltage (DC) 2500 V Tstg Storage Temperature –55 to 150 Tj Max. Operating Junction Temperature I2PAK/TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating µA VDS = Max Rating, TC = 125 °C µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V ±100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 10A 0.25 0.29 Ω

STB20NM60A-1/STP20NM60A/STF20NM60A ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 10A S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1630 pF Coss Output Capacitance 350 pF Crss Reverse Transfer Capacitance pF Coss eq. (2) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 150 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 300V, ID = 10 A RG = 4.7ΩVGS = 10V (see test circuit, Figure 3) ns tr Rise Time ns Qg Total Gate Charge VDD = 400V, ID = 20A, VGS = 10V nC Qgs Gate-Source Charge 8.2 nC Qgd Gate-Drain Charge nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) Turn-off Delay Time VDD = 300V, ID = 20 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) ns tf Fall Time ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current A ISDM (2) Source-drain Current (pulsed) A VSD (1) Forward On Voltage ISD = 20 A, VGS = 0 1.5 V trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, di/dt = 100A/µs, VDD = 50 V, Tj = 25°C (see test circuit, Figure 5) 432 5.1 23.6 ns µC A trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, di/dt = 100A/µs, VDD = 50 V, Tj = 150°C (see test circuit, Figure 5) 595 7.3 24.8 ns µC A

STB20NM60A-1/STP20NM60A/STF20NM60A Transfer Characteristics Output Characteristics Thermal Impedance for TO-220/I2PAK Safe Operating Area for TO-220/I2PAK Safe Operating Area for TO-220FP Thermal Impedance for TO-220FP

STB20NM60A-1/STP20NM60A/STF20NM60A Normalized On Resistance vs Temperature Capacitance Variations Gate Charge vs Gate-source Voltage Transconductance Static Drain-Source On Resistance Normalized Gate Thereshold Voltage vs Temp.

STB20NM60A-1/STP20NM60A/STF20NM60A Normalized BVDSS vs Temperature Source-drain Diode Forward Characteristics Typical Switching Time vs Rg Typical Drain Current Slope vs Rg Typical Drain Source Voltage Slope vs Rg Typical Switching Losses vs Rg

STB20NM60A-1/STP20NM60A/STF20NM60A Typical Coss Stored Energy vs Rg

STB20NM60A-1/STP20NM60A/STF20NM60A Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load

STB20NM60A-1/STP20NM60A/STF20NM60A DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 4.95 5.15 0.194 0.202 E 10.40 0.393 0.410 L 0.511 0.551 3.50 3.93 0.137 0.154 1.27 1.40 0.050 0.055 TO-262 (I2PAK) MECHANICAL DATA

STB20NM60A-1/STP20NM60A/STF20NM60A DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 6.20 6.60 0.244 0.256 2.40 2.72 0.094 0.107 L 0.511 0.551 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

STB20NM60A-1/STP20NM60A/STF20NM60A A B D E H G F 1 2 3 DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 0.030 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 2.4 2.7 0.094 0.106 H 10.4 0.393 0.409 0.630 28.6 30.6 1.126 1.204 9.8 10.6 .0385 0.417 2.9 3.6 0.114 0.141 15.9 16.4 0.626 0.645 9.3 0.354 0.366 Ø 3.2 0.118 0.126 TO-220FP MECHANICAL DATA

STB20NM60A-1/STP20NM60A/STF20NM60A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com