STW20N95K5 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 20

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Packaging mechanical data
  • 6 Revision history

Features

■ TO-220 worldwide best RDS(on) ■ Worldwide best FOM (figure of merit) ■ Ultra low gate charge ■ 100% avalanche tested ■ Zener-protected

Applications

■ Switching applications

Description

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Pulse width limited by safe operating area.

Table 3. Thermal data

2 Electrical characteristics

Table 4. On/off states Table 5. Dynamic

  1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when
  2. energy related is defined as a constant equival ent capacitance giving the same stored energy as Coss

integrity. These integrated Zener diodes thus avoid the usage of external components. Table 6. Switching times Table 7. Source drain diode

  1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for D²PAK and Figure 3. Thermal impedance for D²PAK and Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance Figure 12. Capacitance variations Figure 13. Output capacitance stored energy

0 Qg(nC)

3 Test circuits

Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform

4 Package mechanical data

specifications, grade definitions and product status are available at: www.st.com. Table 9. D²PAK (TO-263) mechanical data

Figure 26. TO-220FP drawing Table 10. TO-220FP mechanical data

Table 11. TO-220 type A mechanical data

Figure 27. TO-220 type A drawing

Table 12. TO-247 mechanical data

Figure 28. TO-247 drawing

5 Packaging mechanical data

Table 13. D²PAK (TO-263) tape and reel mechanical data

6 Revision history

Table 14. Document revision history 25-Nov-2009 1 First release. 12-Jan-2010 2 Corrected V GS value in Table 2: Absolute maximum ratings. Document status promoted from preliminary data to datasheet. Updated Section 4: Package mechanical data. Added Section 5: Packaging mechanical data. 06-Jun-2012 4 Figure 9: Transfer characteristics has been updated.