STP20N90K5 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220 type A package information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID STP20N90K5 900 V 0.25 Ω 20 A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STP20N90K5 20N90K5 TO-220 Tube 1 2 3 TO-220 TAB
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 20 A ID Drain current (continuous) at TC = 100 °C 13 A ID(1) Drain current (pulsed) 80 A PTOT Total dissipation at TC = 25 °C 250 W dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range Notes: (1)Pulse width limited by safe operating area (2)ISD ≤ 20A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS, VDD= 450 V (3)VDS ≤ 720 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 6.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 500 mJ
2 Electrical characteristics
TC = 25 °C unless otherwise specified Table 5: On/off-state Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 900 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 900 V 1 µA VGS = 0 V, VDS = 900 V TC = 125 °C(1) 50 µA IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 10 A 0.21 0.25 Ω Notes: (1) Defined by design, not subject to production test Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 1500 - pF Coss Output capacitance - 120 - pF Crss Reverse transfer capacitance - 1 - pF Co(er)(1) Equivalent capacitance time related VDS = 0 to 720 V, VGS = 0 V - 78 - pF Co(tr)(2) Equivalent capacitance energy related 220 - pF Rg Intrinsic gate resistance f = 1 MHz, ID = 0 A - 3.7 - Ω Qg Total gate charge VDD = 720 V, ID = 20 A VGS= 10 V (see Figure 14: "Test circuit for gate charge behavior") - 40 - nC Qgs Gate-source charge - 14 - nC Qgd Gate-drain charge - 17 - nC Notes: (1)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. (2)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD= 450 V, ID = 10 A, RG = 4.7 Ω VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 20.2 - ns tr Rise time - 13.5 - ns td(off) Turn-off delay time - 64.7 - ns tf Fall time - 16 - ns Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 20 A ISDM(1) Source-drain current (pulsed) - 80 A VSD(2) Forward on voltage ISD = 20 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs,VDD = 60 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 517 ns Qrr Reverse recovery charge - 11.4 µC IRRM Reverse recovery current - 44 A trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 674 ns Qrr Reverse recovery charge - 14 µC IRRM Reverse recovery current - 41.6 A Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS= ±1 mA, ID= 0 A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for additional external componentry.
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized V(BR)DSS vs temperature Figure 7: Static drain-source on-resistance
3 Test circuits
Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform AM01469v10 47 kΩ 2.7 kΩ 1 kΩ IG= CONST 100 Ω D.U.T. +pulse width VGS 2200 μF VG VDD RL
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220 type A package information
Figure 19: TO-220 type A package outline
Table 10: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95
5 Revision history
Table 11: Document revision history Date Revision Changes 10-May-2016 1 First release. 01-Dec-2016 2 Modified: title and RDS(on) value in cover page Modified Table 4: "Avalanche characteristics", Table 5: "On/off-state", Table 6: "Dynamic", Table 7: "Switching times" and Table 8: "Sourcedrain diode" Added Section 2.1: "Electrical characteristics (curves)" Modified Section 3: "Test circuits" Datasheet promoted from preliminary data to production data Minor text changes 24-Jan-2017 3 Modified Table 6: "Dynamic". Minor text changes.