- STP20N60M2-EP - N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a TO-220 package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220 package information

Features

Order code VDS RDS(on) max. ID STB20N60M2-EP 600 V 0.278 Ω 13 A

  • Extremely low gate charge
  • Excellent output capacitance (C OSS) profile
  • Very low turn-off switching losses
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications
  • Tailored for very high frequency converters (f > 150 kHz)

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status link STP20N60M2-EP Product summary Order code STP20N60M2-EP Marking 20N60M2EP Package TO-220 Packing Tube N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a TO-220 package STP20N60M2-EP DS11505 - Rev 3 - June 2018 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified Table 4. On/off states

  1. Defined by design, not subject to production test.

Table 5. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching energy

Electrical characteristics

Table 7. Switching times Figure 19. Switching time waveform) Table 8. Source-drain diode

  1. Pulse width is limited by safe operating area
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area

1 V DS (V)10

Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

Figure 13. Turn-off switching energy vs drain current

3 Test circuits

Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STP20N60M2-EP

Package information

4.1 TO-220 package information

Figure 20. TO-220 type A package outline

Table 9. TO-220 type A package mechanical data

Revision history

Table 10. Document revision history 26-Feb-2016 1 First release. separate datasheet. The document has been updated accordingly. 2.1 Electricalcharacteristics (curves). Modified Table 1. Absolute maximum ratings and Table 8. Source-drain diode. Modified Figure 1. Safe operating area.