STP20N10

STP20N10 STMICROELECTRONICS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR n TYPICAL RDS(on) = 0.09Ω n AVALANCHE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 oC n LOW GATE CHARGE n HIGH CURRENT CAPABILITY n 175oC OPERATING TEMPERATURE n APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM TYPE V DSS R DS(on) ID STP20N10 100 V < 0.12 Ω 20 A TO-220 December 1996 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 100 V V DG R Drain- gate Voltage (RGS =2 0k Ω ) 100 V V GS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc =2 5 oC2 0 A ID Drain Current (continuous) at Tc =1 0 0oC1 4 A IDM (•) Drain Current (pulsed) 80 A P tot Total Dissipation at Tc =2 5 oC 105 W Derating Factor 0.7 W/ oC Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.43 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) 20 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =2 5V ) 60 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, δ <1 % ) 15 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ <1 % ) 14 A ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =2 5 0µAV GS = 0 100 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS = Max Rating x 0.8 Tc =1 2 5oC µA µA IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS (th) Gate Threshold Voltage VDS =V GS ID =2 5 0µ A2 2 . 9 4 V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID = 10 A 0.09 0.12 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on)max V GS =1 0V 20 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on)max ID =1 0A 7 1 2 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS =0 8 0 0 200 1100 300 pF pF pF STP20N10

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =3 0V I D =3A R G =5 0 Ω VGS =1 0V (see test circuit, figure 3) 110 ns ns (di/dt)on Turn-on Current Slope V DD =8 0V I D =2 0A R G =5 0 Ω VGS =1 0V (see test circuit, figure 5)

300 A/ µs

V DD =8 0V I D =2 0A V GS =1 0V 3 0 45 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =8 0V I D =2 0A R G =5 0 Ω VGS =1 0V (see test circuit, figure 5) 130 100 185 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗) Forward On Voltage I SD =2 0A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 20 A di/dt = 100 A/µs V DD =2 0V T j=1 5 0oC (see test circuit, figure 5) 125 0.44 ns µC A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas Thermal Impedance STP20N10

Static Drain-source On Resistance Output Characteristics Transconductance Gate Charge vs Gate-source Voltage STP20N10

Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Cross-over TimeTurn-off Drain-source Voltage Slope STP20N10

Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1:Unclamped Inductive Load Test CircuitsFig. 2:Unclamped Inductive Waveforms STP20N10

Fig. 4:Gate Charge Test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 3:Switching Times Test Circuits For Resistive Load STP20N10

DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C STP20N10

Information furnished is believed to be accur ate and reliable. However, SGS-THOMSON Microelectronics assumes no respon sability for the consequ ences of use of such information nor for any infringem ent of paten ts or other rights of third parties which may results from its use. No license is grante d by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelec tronics. Specifications mentioned in this publication are subject to chan ge without notice. This publicat ion superse des and replaces all information previou sly supplie d. SGS-THOMSON Microelec tronics produ cts are not autho rized for use as critical compone nts in lifesupport devices or system s without expres s written approval of SGS-THOMSON Microelectonics.  1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserve d SGS-THOMSONMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malays ia - Malta - Morocco - The Netherlands - Singap ore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdo m - U.S.A STP20N10