N-channel 30 V, 2.15 m typ., 120 A Power MOSFET in a TO-220 package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 13

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220 type A package information
  • 5 Revision history

Features

Order code VDS RDS(on) max. ID PTOT STP200N3LL 30 V 2.4 mΩ 120 A 176.5 W  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss

Applications

 Switching applications

Description

This device is an N-channel Power MOSFET with very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STP200N3LL 200N3LL TO-220 Tube AM01475v1_Tab D(2, TAB) G(1) S(3)

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ±20 ID Drain current (continuous) at Tcase = 25 °C (silicon limited) 200 A ID(1) Drain current (continuous) at Tcase = 25 °C 120 ID Drain current (continuous) at Tcase = 100 °C 120 IDM(2) Drain current (pulsed) 480 PTOT Total dissipation at Tcase = 25 °C 176.5 W EAS(3) Single pulse avalanche energy 300 mJ Tstg Storage temperature range –55 to 175 °C Tj Operating junction temperature range Notes: (1) Current is limited by package. (2) Pulse width is limited by safe operating area. (3) starting Tj = 25 °C, ID = 68 A Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.85 °C/W Rthj-amb Thermal resistance junction-ambient 62.5

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 30 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 30 V µA VGS = 0 V, VDS = 30 V, Tcase = 125 °C(1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 2.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 60 A 2.15 2.4 mΩ VGS = 4.5 V, ID = 60 A 2.5 3.1 Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 5200 - pF Coss Output capacitance - 640 - Crss Reverse transfer capacitance - 510 - Qg Total gate charge VDD = 15 V, ID = 120 A, VGS = 4.5 V (see Figure 14: "Test circuit for gate charge behavior") - 53 - nC Qgs Gate-source charge - 13 - Qgd Gate-drain charge - 27 - RG Intrinsic gate resistance f = 1 MHz, ID = 0 A, gate DC bias = 0 V, magnitude of alternative signal = 20 mV - 1.1 - Ω Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 15 V, ID = 60 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 18 - ns tr Rise time - 183 - td(off) Turn-off delay time - 90 - tf Fall time - 108 -

Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage VGS = 0 V, ISD = 60 A - 1.1 V trr Reverse recovery time ISD = 120 A, di/dt = 100 A/µs, VDD = 24 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 35 ns Qrr Reverse recovery charge - 34 nC IRRM Reverse recovery current - 2 A Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on resistance

3 Test circuits

Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 TO-220 type A package information

Figure 19: TO-220 type A package outline

Table 8: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95

5 Revision history

Table 9: Document revision history Date Revision Changes 14-Dec-2015 1 First release. 27-Jul-2016 2 Document status promoted from preliminary to production data. Updated Section 2: "Electrical ratings" and Section 3: "Electrical characteristics". Added Section 3.1: "Electrical characteristics (curves)". Minor text changes.