STP120NF04 STMICROELECTRONICS | Alldatasheet

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Table 3: Absolute Maximum ratings () Pulse width limited by safe operating area (1) ISD ≤120A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj = 25°C, Id = 60A, VDD=30 V (#) Current Limited by Package Table 4: Thermal Data ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On /Off Table 6: Dynamic Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) V VDGR Drain-gate Voltage (RGS = 20 kΩ) V VGS Gate- source Voltage ± 20 V ID (#) Drain Current (continuos) at TC = 25°C 120 A ID Drain Current (continuos) at TC = 100°C 120 A IDM () Drain Current (pulsed) 480 A PTOT Total Dissipation at TC = 25°C 300 W Derating Factor W/°C dv/dt (1) Peak Diode Recovery voltage slope V/ns EAS (2) Single Pulse Avalanche Energy 1.2 J Tj Tstg Operating Junction Temperature Storage Temperature -55 to 175 Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W Rthj-pcb Thermal Resistance Junction-pcb Max See Curve on page 6 °C/W Rthj-amb Thermal Resistance Junction-ambient (Free air) Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.8 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 50 A 0.0047 0.0050 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS > =15 V , ID =50 A 150 S Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 5100 pF Coss Output Capacitance 1300 pF Crss Reverse Transfer Capacitance 160 pF

ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Switching On Table 8: Switching Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 20 V, ID = 60 A RG = 4.7Ω VGS = 10 V (see, Figure 20) 220 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 32V, ID = 120 A, VGS = 10V (see, Figure 22) 110 150 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 20 V, ID = 60 A RG = 4.7Ω VGS = 10 V ( see Figure 20 ) ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 120 480 A A VSD (1) Forward On Voltage ISD = 120 A, VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A, di/dt = 100A/µs VDD = 20V, Tj = 150°C (see test circuit, Figure 21) 185 ns nC A

Figure 19: Allowable lav vs Time in Avalanche The previous curve gives the safe operating area for unclamped inductive loads, single pulse or re- petitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the Allowable Current in Avalanche PD(AVE) is the Average Power Dissipation in Ava- lanche (Single Pulse) tAV is the Time in Avalanche To derate above 25 °C, at fixed IAV, the following equation must be applied: IAV = 2 * (Tjmax - TCASE) / (1.3 * BVDSS * Zth) Where: Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV.

DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 6.20 6.60 0.244 0.256 2.40 2.72 0.094 0.107 L 0.511 0.551 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

Table 10: Revision History Date Revision Description of Changes 15-Feb-2005 First Release.

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