STP11NM80

STP11NM80 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

N-CHANNEL 800V - 0.35 Ω - 11 A TO-220 /FP/D2PAK/TO-247 MDmesh™ MOSFET Table 1: General Features ■ TYPICAL R DS (on) = 0.35 Ω ■ LOW GATE INPUT RESISTANCE ■ LOW INPUT CAPACITANCE AND GATE CHARGE ■ BEST R DS (on)*Qg IN THE INDUSTRY

DESCRIPTION

The MDmesh™ associates the Multiple Drain pro- cess with the Company’s PowerMesh™ horizontal layout assuring an oustanding low on-resistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competi tion’s products.

APPLICATIONS

The 800 V MDmesh™ family is very suitable for single switch applications in particular for Flyback and Forward converter topologies and for ignition circuits in the field of lighting. Table 2: Order Codes Figure 1: Package Figure 2: Internal Schematic Diagram TYPE VDSS R DS(on) R DS(on)*Qg ID STP11NM80 STF11NM80 STB11NM80 STW11NM80 800 V 800 V 800 V 800 V < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.40 Ω 14 Ω∗ nC 14 Ω∗ nC 14 Ω∗ nC 14 Ω∗ nC 11 A 11 A 11 A

11 A 1

SALES TYPE MARKING PACKAGE PACKAGING STP11NM80 P11NM80 TO-220 TUBE STF11NM80 F11NM80 TO-220FP TUBE STB11NM80T4 B11NM80 D 2PAK TAPE & REEL STW11NM80 W11NM80 TO-247 TUBE Rev. 2

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Table 3: Absolute Maximum ratings (/circle6 ) Pulse width limited by safe operating area (*) Limited only by the Maximum Temperature Allowed Table 4: Thermal Data Table 5: Avalanche Characteristics Symbol Parameter Value Unit TO-220/D2PAK TO-247 TO-220FP VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 800 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 11 11 (*) A ID Drain Current (continuous) at TC = 100°C 4.7 4.7 (*) A IDM (/circle6 ) Drain Current (pulsed) 44 44 (*) A PTOT Total Dissipation at TC = 25°C 150 35 W Derating Factor 1.2 0.28 W /°C Tj Tstg Operating Junction Temperature Storage Temperature -65 to 150 °C TO-220/D2PAK TO-247 TO-220FP Unit Rthj-case Thermal Resistance Junction-case Max 0.83 3.6 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 2.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = 2.5A, VDD = 50 V) 400 mJ

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Table 7: Dynamic Table 8: Source Drain Diode Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 800 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 100 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V 100 nA VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250 µA 3 4 5 V R DS(on) Static Drain-source On Resistance VGS = 10V, ID =5.5 A 0.35 0.40 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 7.5 A 8 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1630 750 pF pF pF R G Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 2.7 Ω td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 400 V, ID = 5.5 A R G = 4.7Ω VGS = 10 V (Resistive Load see, Figure 4) ns ns ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 640 V, ID = 11 A, VGS = 10V 43.6 11.6 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) A A VSD (1) Forward On Voltage ISD = 11 A, VGS = 0 0.86 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11 A, di/dt = 100 A/µs VDD = 50 V, Tj = 25°C (see test circuit, Figure 5) 612 7.22 23.6 ns µC A trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150°C (see test circuit, Figure 5) 970 11.25 23.2 ns µC A

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 DIM. mm. inch A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 A B D E H G F 123F2 L4L5 DIM. mm. inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 DIM. mm. inch A 4.32 4.57 0.178 0.180 A1 0.00 0.25 0.00 0.009 b 0.71 0.91 0.028 0.350 b2 1.15 1.40 0.045 0.055 c 0.46 0.61 0.018 0.024 c2 1.22 1.40 0.048 0.055 D1 8.01 0.315 E 10.04 10.28 0.395 0.404 e 2.54 0.010 H 13.10 13.70 0.515 0.540 L 1.30 1.70 0.051 0.067 L1 1.15 1.39 0.045 0.054 L2 1.27 1.77 0.050 0.069 L4 2.70 3.10 0.106 0.122 V2 0° 8° 0° 8° TO-263 (D2PAK) MECHANICAL DATA

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 DIM. mm. inch A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e5 . 4 5 0 . 2 1 4 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S5 . 5 0 0 . 2 1 6 TO-247 MECHANICAL DATA

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 TAPE AND REEL SHIPMENT D 2PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Figure 23: Revision History Date Revision Description of Changes 29-Jul-2004 1 Final Document 20-Oct-2005 2 Modified value on Figure 17

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America