STP11NM60A

STP11NM60A STMICROELECTRONICS | Alldatasheet

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Technical content

STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET /c110 TYPICAL R DS (on) = 0.4Ω /c110 HIGH dv/dt /c110 LOW INPUT CAPACITANCE AND GATE CHARGE /c110 LOW GATE INPUT RESISTANCE

DESCRIPTION

The MDmesh ™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

ORDERING INFORMATION

TYPE V DSS R DS(on) ID STP11NM60A STP11NM60AFP STB11NM60A-1 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A SALES TYPE MARKING PACKAGE PACKAGING STP11NM60A P11NM60A TO-220 TUBE STP11NM60AFP P11NM60AFP TO-220FP TUBE STB11NM60A-1 B11NM60A I2PAK TUBE TO-220 3 1 2 3 I2PAK TO-220FP INTERNAL SCHEMATIC DIAGRAM

STP11NM60A/STP11NM60AFP/STB11NM60A-1 ABSOLUTE MAXIMUM RATINGS (/c108 ) Pulse width limited by safe operating area (1) ISD ≤11A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA ON/OFF Symbol Parameter Value Unit STP11NM60A STB11NM60A-1 STP11NM60AFP VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 600 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 11 11 (*) A ID Drain Current (continuous) at TC = 100°C 7 7 (*) A IDM (/c108 ) Drain Current (pulsed) 44 44 (*) A PTOT Total Dissipation at TC = 25°C 110 35 W Derating Factor 0.88 0.28 W/°C dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 -55 to 150 TO-220 / I2PAK TO-220-FP Rthj-case Thermal Resistance Junction-case Max 1.13 3.57 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250µA 234V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 5.5 A 0.4 0.45 Ω

STP11NM60A/STP11NM60AFP/STB11NM60A-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS . Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance V DS = 15 V, ID = 5.5 A 10 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1211 248 pF pF pF C oss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 116 pF R G Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 1.9 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 5.5 A R G = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 11 A, VGS = 10V 49 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 11 A, R G =4 . 7Ω, VGS = 10V (Inductive Load see, Figure 5) ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) A A VSD (1) Forward On Voltage ISD = 11 A, VGS = 0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 560 5.7 20.5 ns µC A

STP11NM60A/STP11NM60AFP/STB11NM60A-1 Thermal Impedance for TO-220 / I2PAK Transfer CharacteristicsOutput Characteristics Safe Operating Area for TO-220FPSafe Operating Area for TO-220 / I2PAK Thermal Impedance for TO-220FP

STP11NM60A/STP11NM60AFP/STB11NM60A-1 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Capacitance VariationsGate Charge vs Gate-source Voltage Transconductance Static Drain-source On Resistance

STP11NM60A/STP11NM60AFP/STB11NM60A-1 Source-drain Diode Forward Characteristics

STP11NM60A/STP11NM60AFP/STB11NM60A-1 Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load

STP11NM60A/STP11NM60AFP/STB11NM60A-1 DIM. mm inch A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 A C D E F G Dia. TO-220 MECHANICAL DATA P011C

STP11NM60A/STP11NM60AFP/STB11NM60A-1 DIM. mm inch A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 A B D E H G ¯ F 123F2 TO-220FP MECHANICAL DATA

STP11NM60A/STP11NM60AFP/STB11NM60A-1 DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 L B D E A CA1 e P011P5/E TO-262 (I2PAK) MECHANICAL DATA

STP11NM60A/STP11NM60AFP/STB11NM60A-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com