Datasheet - STP11N60DM2 - N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 13

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220 type A package information

D(2, TAB) G(1) S(3) NG1D2TS3Z Order code VDS @ TJmax RDS(on)max. ID PTOT STP11N60DM2 650 V 420 mΩ 10 A 110 W

  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Applications

  • Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STP11N60DM2 Product summary Order code STP11N60DM2 Marking 11N60DM2 Package TO-220 Packing Tube N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package STP11N60DM2 Datasheet DS11675 - Rev 2 - November 2019 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width is limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

  1. pulse width limited by T jmax

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified) Table 4. Static

  1. Defined by design, not subject to production test.

Table 5. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times Figure 18. Switching time waveform)

Electrical characteristics

Table 7. Source-drain diode

  1. Limited by maximum junction temperature.
  2. Pulse width is limited by safe operating area.
  3. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Table 8. Gate-source Zener diode The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. additional external componentry.

2.1 Electrical characteristics curves

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. STP11N60DM2

Package information

4.1 TO-220 type A package information

Figure 19. TO-220 type A package outline

Table 9. TO-220 type A package mechanical data

Revision history

Table 10. Document revision history 17-Jun-2016 1 First release. Updated Section 4.1 TO-220 type A package information.