STB11N52K3 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Package mechanical data
  • 6 Revision history

Features

■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected

Applications

■ Switching applications

Description

These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited only by maximum temperature allowed
  2. Pulse width limited by safe operating area

Table 3. Thermal data

2 Electrical characteristics

Table 4. On /off states Table 5. Dynamic

  1. C oss eq. is defined as a constant equivalent capac itance giving the same charging time as C oss when VDS

Table 6. Switching times

integrity. These integrated Zener diodes thus avoid the usage of external components. Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220, Figure 3. Thermal impedance for TO-220, Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on resistance Figure 10. Capacitance variations Figure 11. Output capacitance stored energy Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs

0 Qg(nC)

Figure 14. Source-drain diode forward Figure 15. Normalized B VDSS vs temperature Figure 16. Maximum avalanche energy vs

180 ID=5 A

3 Test circuits

Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Table 9. TO-220FP mechanical data

Figure 23. TO-220FP drawing

Table 10. TO-220 type A mechanical data

Figure 24. TO-220 type A drawing

Table 11. D²PAK (TO-263) mechanical data

5 Package mechanical data

Table 12. D²PAK (TO-263) tape and reel mechanical data

6 Revision history

Table 13. Document revision history 20-May-2011 1 First release. 27-Mar-2012 2 Inserted max and min. values for RG in Table 5. Updated Section 4: Package mechanical data.