STP110N8F7 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package mechanical data
- 4.1 TO-220 package mechanical data
- 5 Revision history
Features
Order code VDS RDS(on)max ID PTOT STP110N8F7 80 V 7.5 mΩ 80 A 170 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STP110N8F7 110N8F7 TO-220 Tube
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 80 (1) A ID Drain current (continuous) at TC = 100 °C 76 A IDM (2) Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 170 W EAS (3) Single pulse avalanche energy 220 mJ TJ Operating junction temperature -55 to 175 Tstg Storage temperature °C Notes: (1)Limited by package (2)Pulse width is limited by safe operating area (3)Starting Tj = 25°C, Id = 25 A, Vdd = 40 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.88 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 4: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 250 µA 80 V IDSS Zero gate voltage drain current VGS = 0, VDS = 80 V 1 µA VGS = 0, VDS = 80 V, TC = 125 °C 10 µA IGSS Gate-body leakage current VDS = 0, VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 4.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 40 A 6.4 7.5 mΩ Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0, VDS = 40 V, f = 1 MHz - 3435 - pF Coss Output capacitance - 653 - pF Crss Reverse transfer capacitance - 57 - pF Qg Total gate charge VDD = 40 V, ID = 80 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior" ) - 46.8 - nC Qgs Gate-source charge - 23.4 - nC Qgd Gate-drain charge - 11.2 - nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 40 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform" ) - 49 - ns tr Rise time - 95 - ns td(off) Turn-off delay time - 60 - ns tf Fall time - 32 - ns
Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage VGS = 0, ISD = 80 A - 1.2 V trr Reverse recovery time ISD = 80 A, di/dt = 100 A/µs VDD = 60 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 48.6 ns Qrr Reverse recovery charge - 58.6 nC IRRM Reverse recovery current - 2.4 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2.2 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
3 Test circuits
Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220 package mechanical data
Figure 19: TO-220 type A package outline
Table 8: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95
5 Revision history
Table 9: Document revision history Date Revision Changes 10-Nov-2014 1 Initial release. 04-Nov-2015 2 Datasheet promoted from target to production data. Modified: Table 2: "Absolute maximum ratings" , Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source drain diode" Added: Section 4.1: "Electrical characteristics (curves)" Minor text changes.