STP110N55F6 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness

Applications

■ Switching applications

Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Current limited by package.

Table 3. Thermal data

2 Electrical characteristics

Table 4. On/off states Table 5. Dynamic Table 6. Switching times

Table 7. Source drain diode

  1. Current limited by package.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

3 Test circuits

Figure 2. Switching times test circuit for Figure 3. Gate charge test circuit Figure 4. Test circuit for inductive load Figure 5. Unclamped inductive load test Figure 6. Unclamped inductive wavefor m Figure 7. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Table 8. TO-220 type A mechanical data

Figure 8. TO-220 type A drawing

5 Revision history

Table 9. Document revision history 18-Jul-2011 1 First release.