Datasheet - STP10NK70ZFP - N‑channel 700 V, 700 mΩ typ., 8.6 A SuperMESH Power MOSFET in a TO-220FP package

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220FP type B package information

Features

Order code VDS RDS(on) max. ID STP10NK70ZFP 700 V 850 mΩ 8.6 A

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Gate charge minimized
  • Zener-protected

Applications

  • Switching applications

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well‑established PowerMESH. In addition to a significant reduction in on‑resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Product status link STP10NK70ZFP Product summary Order code STP10NK70ZFP Marking P10NK70ZFP Package TO-220FP Packing Tube N‑channel 700 V, 700 mΩ typ., 8.6 A SuperMESH Power MOSFET in a TO-220FP package STP10NK70ZFP Datasheet DS2926 - Rev 3 - February 2026 For further information, contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width is limited by safe operating area.

Table 2. Thermal data Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified. Table 4. On/off states

  1. Specified by design, not tested in production.

Table 5. Dynamic

  1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
  2. Specified by design, not tested in production.

Table 6. Switching times Figure 18. Switching time waveform)

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width is limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP type B package information

Figure 19. TO-220FP type B package outline

Package information

Table 8. TO-220FP type B package mechanical data

Revision history

Table 9. Document revision history 22-Aug-2005 2 Inserted Ecopack indication. Removed order code STP10NK70Z. Updated Section 4: Package information.

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