STP10LN80K5 STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220 type A package information
  • 5 Revision history

Features

Order code VDS RDS(on) max. ID STP10LN80K5 800 V 0.63 Ω 8 A  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100% avalanche tested  Zener-protected

Applications

 Switching applications

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STP10LN80K5 10LN80K5 TO-220 Tube

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 8 A ID Drain current (continuous) at TC = 100 °C 5 A IDM (1) Drain current (pulsed) 32 A PTOT Total dissipation at TC = 25 °C 110 W dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 Tj Operating junction temperature - 55 to 150 °C Tstg Storage temperature Notes: (1)Pulse width limited by safe operating area (2)ISD ≤ 8 A, di/dt 100 A/μs; VDS peak < V(BR)DSS, VDD= 640 V (3)VDS ≤ 640 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1.14 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 2.7 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 240 mJ

2 Electrical characteristics

TC = 25 °C unless otherwise specified Table 5: On/off-state Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 800 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 800 V 1 µA VGS = 0 V, VDS = 800 V TC = 125 °C 50 µA IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDD = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 4 A 0.55 0.63 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 427 - pF Coss Output capacitance - 43 - pF Crss Reverse transfer capacitance - 0.25 - pF Co(tr) (1) Equivalent capacitance time related VDS = 0 to 640 V, VGS = 0 V - 72 - pF Co(er) (2) Equivalent capacitance energy related 27 - pF Rg Intrinsic gate resistance f = 1 MHz , ID= 0 A - 7 - Ω Qg Total gate charge VDD = 640 V, ID = 8 A VGS= 10 V See Figure 16: "Test circuit for gate charge behavior" - 15 - nC Qgs Gate-source charge - 4.2 - nC Qgd Gate-drain charge - 9 - nC Notes: (1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS (2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD= 400 V, ID = 4 A, RG = 4.7 Ω VGS = 10 V See Figure 15: "Test circuit for resistive load switching times" and Figure 20: "Switching time waveform" - 11.8 - ns tr Rise time - 10 - ns td(off) Turn-off delay time - 28 - ns tf Fall time - 13 - ns

Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 8 A ISDM (1) Source-drain current (pulsed) - 32 A VSD (2) Forward on voltage ISD = 8 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs,VDD = 60 V See Figure 17: "Test circuit for inductive load switching and diode recovery times" - 350 ns Qrr Reverse recovery charge - 3.9 µC IRRM Reverse recovery current - 22.5 A trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs VDD =

60 V, Tj = 150 °C

See Figure 17: "Test circuit for inductive load switching and diode recovery times" - 505 ns Qrr Reverse recovery charge - 5 µC IRRM Reverse recovery current - 20 A Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS= ± 1mA,ID= 0 A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for additional external componentry.

2.2 Electrical characteristics (curves)

Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance

Figure 14: Output capacitance stored energy

3 Test circuits

Figure 15: Test circuit for resistive load switching times Figure 16: Test circuit for gate charge behavior Figure 17: Test circuit for inductive load switching and diode recovery times Figure 18: Unclamped inductive load test circuit Figure 19: Unclamped inductive waveform Figure 20: Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 TO-220 type A package information

Figure 21: TO-220 type A package outline

Table 10: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95

5 Revision history

Table 11: Document revision history Date Revision Changes 10-Jun-2015 1 First release. 14-Dec-2015 2 Datasheet promoted from preliminary data to production data Modified: Table 2: "Absolute maximum ratings", Table 3: "Thermal data", Table 4: "Avalanche characteristics", Table 5: "On/off-state", Table 6: "Dynamic", Figure 2: "Safe operating area", Figure 3: "Thermal impedance", Figure 4: "Output characteristics" and Figure 7: "Static drain-source on-resistance" Minor text changes