STP105N3LL VBSEMI | Alldatasheet

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N-Channel 30-V (D-S) MOSFET

FEATURES

 100 % R g and UIS Tested  C ompliant to RoHS Directive 2011/65/EU

APPLICATIONS

 OR-ing  S erver D C / D C Notes: a. Based on TC = 25 °C. b. Surfa ce mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a, e Qg (Typ) 0.0021 at VGS = 10 V 92 nC0.0029 at VGS = 4.5 V 130 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source V oltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID a, e A TC = 70 °C 110e TA = 25 °C 39b, c TA = 70 °C 2 b, c Pulsed Drain Current IDM 3 0 Avalanche Current Pulse L = 0. 1 mH IAS 39 Single Pulse Avalanche Energy EAS 375 mJ Continuous Source-Drain Diode Cu rrent TC = 25 °C IS 90a, e ATA = 25 °C 3.13b, c Maximum P ower Dissipation TC = 25 °C PD 250a W TC = 70 °C 175 TA = 25 °C 3.75b, c TA = 70 °C 2.63b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. U nit Maximum Junction-to-Ambientb, d t  10 sec RthJA 32 40 °C/W Maximum Junction-to-Case Stead y State RthJC 0.5 0.6 T O-220AB Top View GD S

  • DT-Trench Power MOSFET 140 140 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP105N3LL A ll data sheet.ocm

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond t hose listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless othe rwise noted) Paramet er Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 35 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ - 7.5 Gate-Source Threshold V oltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 10 0 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V GS = 0 V 1 µAVDS = 24 V GS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 90 A Drain-Source On-State Resista ncea RDS(on) VGS = 10 V, ID = 38.8 A 0.0021 VGS = 4.5 V, ID = 37 A 0.0029 Forward Tra nsconductancea gfs VDS = 15 V, ID = 38.8 A 160 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 6201 pFOutput Capacitance Coss 1725 Reverse Transf er Capacitance Crss 970 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 38.8 A 171 257 nCVDS = 15 V, VGS = 4.5 V, ID = 28.8 A 81.5 123 Gate-Source Charge Qgs 34 Gate-Drain Charg e Qgd 29 Gate Resista nce Rg f = 1 MHz 1.4 2.1  Tur n-On Delay Time td(on) VDD = 15 V, RL = 0.625  ID  24 A, VGEN = 10 V, Rg = 1  18 27 ns Rise Time tr 11 17 Turn-Off Dela y Time td(off) 70 105 Fall T ime tf 10 15 Tur n- On Delay Time td(on) VDD = 15 V, RL = 0.67  ID  22.5 A, VGEN = 4.5 V, Rg = 1  55 83 Rise Time tr 180 270 Turn-Off Dela y Time td(off) 55 83 Fall T ime tf 12 18 Drain-Source B ody Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C A Pulse Diode Forw ard Currenta ISM 3 0 Body Diode Voltage VSD IS = 22 A 0.8 1.2 V Body Diode Reverse Recove ry Time trr IF = 20 A, di/dt = 100 A/µs , TJ = 25 °C 52 78 ns Body Diode Re verse Recovery Charge Qrr 70.2 105 nC Reve rse Recovery Fall Time ta 27 ns Reverse Recove ry Rise Time tb 25 V V 140 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP105N3LL A ll data sheet.ocm

TYPICAL CHARACTERISTICS (25 °C, unless otherwis e noted) Output Characteristics T ransconductance Capacitance V GS = 10 V thru 4 V VDS - Drain-to-Source Voltage (V) ) A ( t n e r ruC n i a r D - ID V GS = 2 V V GS = 3 V 100 200 300 400 500 600 0 1 02 03 04 05 06 07 0809 0 ) S ( e cn a t cud n o c s n a r T - Gs f ID - Drain Current (A) T C = - 55 °C T C = 25 °C T C = 125 °C 1000 2000 4000 6000 8000 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ) F p ( e c n a t i c a p a C - C C iss C oss C rss Transfer Characteristics RDS(on) vs. Drain Curr ent Gate Charge 0.0 0.6 1.2 1.8 2.4 3.0 012 34 VGS - Gate-to-Source Voltage (V) ) A ( t n e r ruC n i a r D - ID T C = 25 °C T C = - 55 °C T C = 125 °C 0.000 0.0010 0.0020 0.0030 0.0040 0.0050 0.0060 0 1 53 04 5 6 07 59 0 ID - Drain Current (A) RDS(on) e (Ω) c n at s i s e R - n O – V GS = 10 V V GS = 4.5 V 0 306 09 0 1 2 0 1 5 0 1 80 )V( e ga t l oV e c ruo S - o t - e t a G - Qg - Total Gate Charge (nC) VGS I D = 38.8 A V DS = 24 V V DS = 15 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP105N3LL A ll data sheet.ocm

TYPICAL CHARACTERISTICS (25 °C, unless otherw ise noted) On-Resistance vs. Junction Temperature RDS(on) vs. VGS vs. Temperatur e 0.2 0.4 0.6 0.8 1.0 1.2 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) V GS = 10 V, ID = 38.8 A R ) n o ( S D istance s e R- n O - ) d e z i l a m r oN( VGS = 4.5 V, ID = 27 A 0.000 0.001 0.002 0.003 0.004 0.005 02468 10 VGS - Gate-to-Source Voltage (V) RDS(on) - e (Ω) c n at s i s e R - n O I D = 38.8 A T A = 125 °C T A = 25 °C Forward Diode Voltage vs. Tem perature Threshold Voltage 0.001 0.01 0.1 100 0 0.2 0.4 0.6 0.8 1 ) A ( t n e r ruC e c ruo S - IS VSD - Source-to-Drain Voltage (V) T J = 25 °C T J = 150 °C 0.8 1.2 1.6 2.0 2.4 2.8 - 50 - 25 0 25 50 75 100 125 150 175 )V( e c n a i r aV V) h t ( S G TJ - Temperature (°C) I D = 250 µA Safe Operating Area, Junct ion-to-Ambient 0.001 0.01 0.1 100 1000 1 1 10 100 T A = 25 °C Single Pulse - Drain Current (A)ID dc 10 s 1 s 100 ms 10 ms *Limited by rDS (on) VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP105N3LL A ll data sheet.ocm

TYPICAL CHARACTERISTICS (25 °C, unless o therwise noted) *The power dissipation PD is ba sed on TJ(max) = 175 °C, using junction-to-ca se thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 100 125 150 0 25 50 75 100 125 150 175 ID ) A ( t n e r ruC n i a r D - TC - Case Temperature (°C) Power Derating 100 150 200 250 300 0 25 50 75 100 125 150 175 C - Case Temperature (°C) )W( n o i t a p i s s i D r ewo P T Normalized Thermal Transie nt Impedance, Junction-to-Case Square Wave Pulse Duration (sec) 0.1 0.01 10-4 10-3 10-2 10-1 1 Normalized Effective T ransient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP105N3LL A ll data sheet.ocm

TO-220 FULLPAK (HIGH VOLT AGE) Notes 1. To be used only for process draw ing. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet C pk > 1.33. 4. All dimensions includ e burrs and plating thickness. 5. No chipping or package damage. E b n L e Ø P D c u V A MILLIMETERS INCHES DIM. MIN. MA X. MIN. MAX. A 4.570 4.830 0.180 0.190 A1 2.570 2.830 0.101 0.111 A2 2.510 2.850 0.099 0.112 b 0.622 0.890 0.024 0.035 b2 1.229 1.400 0.048 0.055 b3 1.229 1.400 0.048 0.055 c 0.440 0.629 0.017 0.025 D 8.650 9.800 0.341 0.386 d1 15.88 16.120 0.622 0.635 d3 12.300 12.920 0.484 0.509 E 10.360 10.630 0.408 0.419 e 2.54 BSC 0.100 BSC L 13.200 13.730 0.520 0.541 L1 3.100 3.500 0.122 0.138 n 6.050 6.150 0.238 0.242 Ø P 3.050 3.450 0.120 0.136 u 2.400 2.500 0.094 0.098 v 0.400 0.500 0.016 0.020 ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP105N3LL A ll data sheet.ocm

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP105N3LL A ll data sheet.ocm