STB100NF03L-03 STMICROELECTRONICS | Alldatasheet

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STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET ■ TYPICAL R DS (on) = 0.0026 Ω ■ LOW THRESHOLD DRIVE ■ 100% AVALANCHE TESTED ■ LOGIC LEVEL DEVICE ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") ■ SURFACE-MOUNTING D 2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SWITCHING SPEED ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ SOLENOID AND RELAY DRIVERS TYPE VDSS R DS(on) ID STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-01 30 V 30 V 30 V <0.0032 Ω <0.0032 Ω <0.0032 Ω 100 A 100 A 100 A D 2PAK TO-263 (Suffix “T4”) TO-220 1 2 3 I2PAK TO-262 (Suffix “-1”) ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area (1) Current Limited by Package (2) Starting Tj = 25 oC, IAR = 50A, VDD = 50V Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 30 V VGS Gate- source Voltage ± 16 V ID (1) Drain Current (continuous) at TC = 25°C 100 A ID (1) Drain Current (continuous) at TC = 100°C 100 A IDM (•) Drain Current (pulsed) 400 A Ptot Total Dissipation at TC = 25°C 300 W Derating Factor 2 W/°C EAS (2) Single Pulse Avalanche Energy 1.9 J Tstg Storage Temperature -55 to 175 °CTj Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 THERMAL DATA ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 0.5 62.5 300 °C/W °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 30 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 1 1.7 2.5 V R DS(on) Static Drain-source On Resistance VGS = 10 V I D = 50 A VGS = 4.5 V I D = 50 A 0.0026 0.0032 0.0032 0.0045 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS >ID(on)xRDS(on)max ID =10 A 10 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V f = 1 MHz VGS = 0 6200 1720 300 pF pF pF

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 15 V I D = 50 A R G = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 3) 315 ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 24V ID = 100A VGS = 5V 88 22.5 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 20 V I D = 50 A R G = 4.7Ω, V GS = 4.5 V (Resistive Load, Figure 3) 115 ns ns tr(Voff) tf tc Off-Voltage Rise Time Fall Time Cross-over Time Vclamp = 24 V I D = 100 A R G = 4.7Ω VGS = 4.5 V (Inductive Load, Figure 5) 110 100 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 100 400 A A VSD (*) Forward On Voltage ISD = 100 A V GS = 0 1.3 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 100 A di/dt = 100A/µs VDD = 20 V T j = 150°C (see test circuit, Figure 5) 150 ns nC A Thermal Impedance ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature . .

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 DIM. mm. inch. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.394 0.409 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0° 8° 0° 8° D 2PAK MECHANICAL DATA

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 DIM. mm inch A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 L B D E A CA1 e P011P5/E TO-262 (I2PAK) MECHANICAL DATA

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 DIM. mm. inch. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.40 0.645 L3 28.90 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 TO-220 MECHANICAL DATA

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R5 0 1 . 5 7 4 W 23.7 24.3 0.933 0.956 DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA * on sales type TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* D 2PAK FOOTPRINT TAPE MECHANICAL DATA

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics  2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com