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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 13
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package mechanical data
- 5 Revision history
Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. TO-220 TAB $0Y 7$% Order code V DS RDS(on) max. I D PTOT STP100N6F7 60 V 5.6 m Ω 100A 125 W Table 1. Device summary
1 Electrical ratings
Table 2. Absolute maximum ratings
- Pulse width is limited by safe operating area
Table 3. Thermal data
2 Electrical characteristics
Table 4. On/off states Table 5. Dynamic Table 6. Switching times
Table 7. Source drain diode
- Pulse test: pulse duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Figure 19. TO-220 type A drawing
Table 8. TO-220 type A mechanical data
4 Revision history
Table 9. Document revision history 27-Nov-2014 1 First release.