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High Efficiency Thyristor Discretes Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 Symbol Test Conditions Maximum Ratings Unit TVJ=TVJM TC=120oC; 180o sine 30 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 300 320 270 290 AITSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 450 440 365 355 A2s i2t (di/dt)cr 150 500 A/us (dv/dt)cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=I tp=300us 5 W PGAV 0.5 W ITRMS ITAVM oC TVJ TVJM Tstg -55...+150 150 -55...+150 Md Fc Mounting torque (M3) Mounting force with clip 20...120 Nm N Weight 6 g TVJ=TVJM repetitive, IT=90A f=50Hz, tp=200us VD=2/3VDRM IG=0.3A non repetitive, IT=30A diG/dt=0.3A/us VRGM 10 V TAVM typical K=Cathode, A=Anode, G=Cate G K A STOE30G06 VRRM V 600 VRSM V 700 A K G A(TAB) STOE30G08 800 900 STOE30G10 1000 1100 STOE30G12 1200 1300 ©2012 SIRECTIFIER All rights reserved www.sirectifier.com

Symbol Test Conditions Characteristic Values Unit VVT IT=30A; TVJ=25oC 1.28 VTO For power-loss calculations only (TVJ=150oC) 0.86 V rT 15 m VD=6V; TVJ=25oC TVJ=-40oCVGT 1.3 1.6 V VD=6V; TVJ=25oC TVJ=-40oCIGT 28 50 mA VGD TVJ=TVJM; VD=2/3VDRM 0.2 V IGD 1 mA IH TVJ=25oC; VD=6V; RGK= 60 mA TVJ=25oC; tp=10us; IG=0.3A; diG/dt=0.3A/us 90 mAIL DC currentRthJC 0.50 K/W DC currentRthJH 0.25 K/W a Max. acceleration, 50 Hz 50 m/s2 IR, ID TVJ=TVJM; VR=VRRM; VD=VDRM 5 mA TVJ=25oC; VD=1/2VDRM IG=0.3A; diG/dt=0.3A/ustgd 2 us TVJ=125oC 25 High Efficiency Thyristor Discretes STOE30G06 thru STOE30G12 YYWW Logo Part Number DateCode Product Marking Sirectifier STOE30G12 K G A ©2012 SIRECTIFIER All rights reserved www.sirectifier.com

High Efficiency Thyristor Discretes STOE30G06 thru STOE30G12 0 4 0 8 0 1 2 0 1 0 2 5 5 0 7 5 10-2 10-1 100 101 10-1 100 101 102 0.001 0.01 0.1 1 120 160 200 240 280 0.5 1.0 1.5 2.0 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 IT [A] t[ s ]V [V] 2 3456 7819 0 100 1000 I2t [A2s] ITSM [A] TVJ = 25°C TVJ = 1 2 5 ° C TVJ = = 5°C

50 Hz, 80% VRRM

TVJ =1 2 5 ° C TVJ =4 5 ° C VR = 0 V VG [V] IG [mA] ITAVM [A] Tcase [°C] [K/W] T Fig. 1 Forward characteristics Fig. 2 Surge overload current ITSM: crest value, t: duration t[ m s ] Fig. 3 I2t versus time (1-10 s) Fig. 4 Gate voltage & gate current Triggering: A = no; B = possible; C = safe Fig. 6 Max. forward current at case temperature [ms] Fig. 7 Transient thermal impedance junction to case TVJ =1 5 0 ° C 125°C IGD: TVJ = 125°C IGD: : VJ =2 5 ° C tgd [μs] lim. typ. IG [A] Fig. 5 Gate controlled delay time tgd 0 0 1 2 0 0 3 4 0 IF(AV) [A] P(AV) [W] Fig. 7a Power dissipation versus d irect output current Fig. 7b and ambient temperature 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Tamb [°C] TVJ = 1 2 5 ° C RthHA 0.6 0.8 1.0 2.0 4.0 8.0 dc = 0.5 0.4 0.33 0.17 0.08 dc = 0.5 0.4 0.33 0.17 0.08 i Rthi (K/W) ti (s) 1 0.08 0.01 2 0.06 0.001 3 0 . 2 0 . 0 2 4 0.05 0.2 5 0.11 0.11 IGT:T VJ =25°C IGT:T VJ =0° C IGT:T VJ =-40°C ©2012 SIRECTIFIER All rights reserved www.sirectifier.com