STO65N60DM6 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 15

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-LL type A2 package information
  • 4.2 TO-LL packing information

Features

Order code VDS RDS(on) max. ID STO65N60DM6 600 V 76 mΩ 46 A

  • Fast-recovery body diode
  • Lower R DS(on) per area vs previous generation
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected
  • Excellent switching performance thanks to the extra driving source pin

Applications

  • Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Maturity status link STO65N60DM6 Device summary Order code STO65N60DM6 Marking 65N60DM6 Package TO-LL type A2 Packing Tape and reel N‑channel 600 V, 67 mΩ typ., 46 A MDmesh DM6 Power MOSFET in a TO‑LL package STO65N60DM6 Datasheet DS13572 - Rev 1 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com/Power Transistors

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Referred to TO-247 package.
  2. Pulse width is limited by safe operating area.

Table 2. Thermal data

  1. When mounted on 1 inch² FR-4 pcb, standard footprint 2 Oz copper board.
  2. When mounted on 40x40mm FR-4 pcb, 6 cm² 2 Oz copper board.

Table 3. Avalanche characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified) Table 4. On /off-states

  1. Defined by design, not subject to production test.

Table 5. Dynamic

  1. C oss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times Figure 18. Switching time waveform)

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width is limited by safe operating area.
  2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characterisics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance

3 Test circuits

Figure 13. Switching times test circuit for resistive load Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-LL type A2 package information

Figure 19. TO-LL type A2 package outline

Package information

Table 8. TO-LL type A2 package mechanical data

Figure 20. TO-LL type A2 recommended footprint (dimensions are in mm)

4.2 TO-LL packing information

Figure 21. Carrier tape outline and dimensions Figure 22. Reel outline and dimensions

Figure 23. TO-LL orientation in tape pocket

Revision history

Table 9. Document revision history 30-Mar-2021 1 First release.