STO47N60M6 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 15

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-LL type A package information
  • 4.2 TO-LL packing information

Features

Order code VDS RDS(on) max. ID STO47N60M6 600 V 80 mΩ 36 A

  • Reduced switching losses
  • Lower R DS(on) per area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
  • Excellent switching performance thanks to the extra driving source pin

Applications

  • Switching applications

Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STO47N60M6 Product summary Order code STO47N60M6 Marking 47N60M6 Package TO-LL type A Packing Tape and reel N-channel 600 V, 70 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO‑LL package STO47N60M6 Datasheet DS12393 - Rev 3 - May 2021 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width limited by safe operating area.

Table 2. Thermal data

  1. When mounted on 1 inch² FR-4 pcb, standard footprint 2 Oz copper board.
  2. When mounted on 40x40mm FR-4 pcb, 6 cm² 2 Oz copper board.

Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified. Table 4. On/off states

  1. Defined by design, not subject to production test.

Table 5. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times Figure 18. Switching time waveform)

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width is limited by safe operating area.
  2. Pulse test: pulse duration = 300 μs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

3 Test circuits

Figure 13. Switching times test circuit for resistive load Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-LL type A package information

Figure 19. TO-LL type A package outline

Package information

Table 8. TO-LL type A package mechanical data

Figure 20. TO-LL type A recommended footprint (dimensions are in mm)

4.2 TO-LL packing information

Figure 21. Carrier tape outline and dimensions Figure 22. Reel outline and dimensions

Figure 23. TO-LL orientation in tape pocket

Revision history

Table 9. Document revision history 04-Dec-2017 1 First release. Modified Section 1 Electrical ratings and Section 2 Electrical characteristics. Added Section 2.1 Electrical characteristics (curves). Updated Section 4.1 TO-LL type A package information. Updated title and Device summary in cover page. Updated Table 2. Thermal data. Updated Section 4 Package information.