DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Discrete Thyristors (Isolated) K K=Cathode, A=Anode, G=Gate Dimensions TO-218 STO875 STO1275 STO1675 VRRM V 800 1200 1600 VRSM V 900 1300 1700 A K G Symbol Test Conditions Maximum Ratings Unit TVJ=TVJM TC=75oC; 180o sine 48 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 540 580 480 500 AITSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 1350 1300 1050 1030 A2s i2t (di/dt)cr 150 500 A/us (dv/dt)cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=300us 5 W PGAV 0.5 W ITRMS ITAVM oC TVJ TVJM Tstg -40...+140 140 -40...+125 VISOL 50/60Hz, RMS t=1minute, leads-to-tab 2500 V~ Md Fc Mounting torque (M3) Mounting force with clip 20...120 Nm N Weight 6 g TVJ=TVJM repetitive, IT=40A f=50Hz, tp=200us VD=2/3VDRM IG=0.3A non repetitive, IT=ITAVM diG/dt=0.3A/us VRGM 10 V STO1875 1800 1900 REF. DIMENSIONS Millimeters Inches A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.2 21.1 0.795 0.594 0.831 H 15.1 15.5 0.610 J 5.2 5.65 0.204 0.134 0.222 K 3.4 3.65 0.144 ØL 4.08 4.17 0.161 0.164 P 1.20 1.40 0.047 0.055 R 4.60 0.181 R H K GF E D B A C J J P ØL A G AK G Page1 © 2016 Sirectifier Electronics Technology Corporation Telÿ +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

Symbol Test Conditions Characteristic Values Unit VVT IT=75A; TVJ=25oC 1.60 VTO For power-loss calculations only (TVJ=125oC) 0.85 V rT 11 m VD=6V; TVJ=25oC TVJ=-40oCVGT 1.5 1.6 V VD=6V; TVJ=25oC TVJ=-40oCIGT 100 200 mA VGD TVJ=TVJM; VD=2/3VDRM 0.2 V IGD 10 mA IH TVJ=25oC; VD=6V; RGK= 100 mA TVJ=25oC; tp=10us; IG=0.3A; diG/dt=0.3A/us 150 mAIL DC currentRthJC 0.62 K/W DC currentRthJH 0.82 K/W a Max. acceleration, 50 Hz 50 m/s2 IR, ID TVJ=TVJM; VR=VRRM; VD=VDRM 5 mA TVJ=25oC; VD=1/2VDRM IG=0.3A; diG/dt=0.3A/ustgd 2 us 1 1 0 100 1000 10000 0. 1 IG V G mA V Fig. 1 Gate trigger range IGD , T VJ =125 °C 4: P GAV = 0.5 W 5: P GM = 5 W 6: P GM = 10 W 1: I GT , T VJ = 125 °C 2: I GT , T VJ = 2 5 °C 3: I GT , T VJ = -40 °C 10 100 1000 100 1000 s tgd IG mA ty p . Li m it Fig. 2 Gate controlled delay time tgd T VJ = 25 °C STO875 thru STO1875 Discrete Thyristors (Isolated) Page2 © 2016 Sirectifier Electronics Technology Corporation Telÿ +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

IT (AV)M 0 1 02 0 3 04 0 5 06 07 0 100 120 140 0 2 5 5 0 7 5 1 00 125 150 0. 001 0. 01 0. 1 1 100 200 300 400 100 0. 001 0 . 0 1 0 . 1 1 1 0 1 00 0. 0 0. 5 1. 0 ITS M IT A V T t s P T W IT (AV)M A T am b t s Z th JC K/ W V A 12 3 4 5 6 7 8 91 0 1000 I2 t t A 2 s T ca se A ms 500 2000 Fig. 8 T ransient thermal impedance junction to case Fig. 3 Forward characteristics Fig. 4 Surge overload current ITSM : crest value, t: duration Fig. 5 I2 t versus time (1-10 ms) Fig. 6 Power dissipation versus forward current and ambient temperature Fig. 7 Max. forward current at case temperature T VJ = 125 °C T VJ = 45 °C 50Hz, 80%V RRM T VJ = 125 °C DC 180 ° sin 120 ° 60 ° 30 ° R thKA :

0.1 K/W

0.5 K/W

1 K/W

2 K/W

4 K/W

10 K/W

T VJ = 45 °C DC 180 ° sin 120 ° 60 ° 30 ° 30 ° 60 ° 120 ° 180 ° DC V R = 0 V T VJ = 25 °C T VJ = 125 °C R thJC for various conduction angles d: dR thJC (K/W) DC 0.62 180 0.71 120 0.748 60 0.793 30 0.817 Constants for Z thJC calculation: iR thi (K/W) ti (s) 1 0.206 0.013 2 0.362 0.118 3 0.052 1.488 STO875 thru STO1875 Discrete Thyristors (Isolated) Page3 © 2016 Sirectifier Electronics Technology Corporation Telÿ +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com