STD1LNK60Z-1 STMICROELECTRONICS | Alldatasheet

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STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Table 3: Absolute Maximum ratings (/circle6 ) Pulse width limited by safe operating area (1) ISD ≤0.3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX. Table 4: Thermal Data (#) When mounted on 1 inch² Fr-4 board, 2 Oz Cu Table 5: Avalanche Characteristics Table 6: Gate-Source Zener Diode PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Value Unit IPAK TO-92 SOT-223 VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 600 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 0.8 0.3 0.3 A ID Drain Current (continuous) at TC = 100°C 0.5 0.189 0.189 A IDM (/circle6 ) Drain Current (pulsed) 3.2 1.2 1.2 A PTOT Total Dissipation at TC = 25°C 25 3 3.3 W Derating Factor 0.24 0.025 0.026 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 800 V dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 °C IPAK TO-92 SOT-223 Rthj-case Thermal Resistance Junction-case Max 5 -- -- °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 120 37.87(#) °C/W Rthj-lead Thermal Resistance Junction-lead Max -- 40 -- °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 260 260 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 0.8 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 50 V) 60 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit BV GSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 V

STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On /Off Table 8: Dynamic Table 9: Source Drain Diode Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS . Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS , ID = 50 µA 3 3.75 4.5 V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.4 A 13 15 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = V, ID = 0.4 A 0.5 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 94 17.6 2.8 pF pF pF C oss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 11 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time VDD = 300V, ID = 0.4 A R G = 4.7Ω VGS = 10 V (see Figure 21) 5.5 ns ns ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 0.8 A, VGS = 10V (see Figure 25) 4.9 2.7 6.9 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 0.8 2.4 A A VSD (1) Forward On Voltage ISD = 0.8A, VGS = 0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 0.8 A, di/dt = 100A/µs VDD = 20V, Tj = 25°C (see Figure 23) 135 216 3.2 ns nC A trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 0.8 A, di/dt = 100A/µs VDD = 20V, Tj = 150°C (see Figure 23) 140 224 3.2 ns nC A

STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:

STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z DIM. mm. inch A1 4.45 4.95 0.170 0.194 T 3.30 3.94 0.130 0.155 T1 1.6 0.06 T2 2.3 0.09 d 0.41 0.56 0.016 0.022 delta H -2 2 -0.08 0.08 W 17.5 18 19 0.69 0.71 0.74 W2 0.5 0.02 H 18.5 20.5 0.72 0.80 H1 25 0.98 t0 . 9 0 . 0 3 5 L1 1 0 . 4 3 l1 3 0.11 delta P -1 1 -0.04 0.04 TO-92 AMMOPACK

STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z DIM. mm inch A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A C H D LL2 1 3 = = B E G = = = = TO-251 (IPAK) MECHANICAL DATA 0068771-E

STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z DIM. mm. inch A 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V5 ° 5 ° TO-92 MECHANICAL DATA

STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z DIM. mm inch A 1.80 0.071 e 2.30 0.090 e1 4.60 0.181 V1 0 o 10o A1 0.02 P008B SOT-223 MECHANICAL DATA

STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Table 10: Revision History Date Revision Description of Changes 19-Mar-2003 1 First Release 15-May-2003 2 Removed DPAK 09-Jun-2003 3 Final Datasheet 17-Nov-2004 4 Inserted SOT-223. 15-Feb-2005 5 Modified Curve 4 07-Sep-2005 6 Inserted Ecopack indication

STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America