STN1A60 TGS | Alldatasheet
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Parameter Symbol Typ UnitSTN1A60 STN1A80 Repetitive peak off-state voltages VDRM VRRM 600 800 V RMS on-state current IT(RMS) 1.0 A Non-repetitive peak on-state current ITSM 10 A Max. Operating Junction Temperature Tj 110 oC Storage Temperature Tstg -45~150 oC STN1A60/80 GENERAL DESCRIPTION Parameter Symbol Test Conditions Min Typ Max Unit STN1A60 STN1A80 Repetitive peak off-state voltage s VDRM VRRM — 600 800 — V RMS on-state current IT(RMS) all conduction angles — 1.0 — A On-state voltage VT IT=1.5 A — — 1.60 V Holding current IH VD =12 V; IGT=10 mA — — 5 mA Gate trigger current T2+G+ IGT VD =6.0 V; RL= 10Ω — — 5.0 mAT2+G- — — 5.0 T2-G- — — 5.0 T2-G+ — — 12 Gate trigger voltage VGT VD =6.0 V; RL= 10Ω — 0.5 1.8 V Silicon Bidirectional Triode Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO - 92 package which is readily adaptable for use in automatic insertion equipment. Product specification TO-92 ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
( Ta = 25 C) O ( Ta = 25 C) O TIGER ELECTRONIC CO.,LTD