STN1802 STMICROELECTRONICS | Alldatasheet

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Technical content

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAST-SWITCHING SPEED ■ SURFACE-MOUNTING SOT-223 MEDIUM POWER PACKAGE IN TAPE & REEL APPLICATIONS: ■ CCFL DRIVERS ■ VOLTAGE REGULATORS ■ RELAY DRIVERS ■ HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS

DESCRIPTION

The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. INTERNAL SCHEMATIC DIAGRAM March 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) 80 V V CEO Collector-Emitter Voltage (IB = 0) 60 V V EBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 3 A ICM Collector Peak Current (tp < 5 ms) 6 A IB Base Current 1 A P tot Total Dissipation at Tamb = 25 oC 1.6 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC SOT-223 Ordering Code Marking STN1802 N1802

R thj-amb Thermal Resistance Junction-Ambient Max 78 oC/W

  • Device mounted on a PCB area of 1 cm2 . ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) V CB = 40 V 0.1 µ A IEBO Emitter Cut-off Current (IC = 0) V EB = 4 V 0.1 µ A V (BR)CBO ∗ Collector-Base Breakdown Voltage (IE = 0) IC = 10 µA 80 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = 1 mA 60 V V (BR)EBO ∗ Emitter-Base Breakdown Voltage (IC = 0) IE = 10 µ A 6V V CE(sat)∗ Collector-Emitter Saturation Voltage IC = 2 A IB = 100 mA IC = 3 A IB = 150 mA 150 200 300 400 mV mV V BE(sat)∗ Base-Emitter Saturation Voltage IC = 2 A IB = 100 mA 0.9 1.2 V hFE ∗ DC Current Gain I C = 100 mA VCE = 2 V IC = 3 A VCE = 2 V 200 100 400 fT Transition frequency V CE = 10 V IC = 50 mA 150 MHz C CBO Collector-Base Capacitance V CB = 10 V f = 1 MHz 50 pF tON ts tf RESISTIVE LOAD Turn- on Time Storage Time Fall Time IC = 1 A VCC = 30 V IB1 = - IB2 = 0.1 A 1.35 120 ns ms ns ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % STN1802

DIM. mm inch A 1.80 0.071 e 2.30 0.090 e1 4.60 0.181 V1 0 o 10o A1 0.02 P008B SOT-223 MECHANICAL DATA STN1802

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com STN1802