STLT19 STMICROELECTRONICS | Alldatasheet

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N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MaS TRANSISTORS TYPE Voss Ros(on) STLT20 60 V 0.150 STLT20FI 60 V 0.150 STLT19 50 V 0.150 STLT19FI 50 V 0.150

  • LOGIC LEVEL ( + 5V) CMOSITTL COMPATIBLE INPUT
  • HIGH INPUT IMPEDANCE
  • ULTRA FAST SWITCHING 15 A 10 A 15 A 10 A N -channel enhancement mode POWER MOS field effect transistors. The low input voltage -logic le­ vel -and easy drive make these devices ideal for automotive and industrial applications. Typical uses are in relay and actuator driving in the automotive enviroment. ABSOLUTE MAXIMUM RATINGS PRELIMINARY DATA TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM TO-220 ISOWATT220 STLT20 STLT20FI STLT19 STLT19FI Drain-source voltage (V GS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drai n cu rrent (cont.) at T c = 25 ° C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature e) Pulse width limited by safe operating area tune 1988 TO-220 9.5 0.6 ±15 v V V ISOWATT220 -65 to 150 150 10 A 6.3 A 40 A 30 ·W

0.24 W/oC

THERMAL DATA TO-220 ISOWA TT220 Rthj _ case Thermal resistance junction-case max TI Maximum lead temperature for soldering purpose max 1.67 4.16 275 ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified) Parameters Test Conditions OFF V(BR) oss Drain-source 10= 250 IlA VGs= 0 breakdown voltage for STL T20/FI 60 for STL T19/FI 50 loss Zero gate voltage VOS = Max Rating drain current (VGS = 0) Vos = Max Rating x 0.8 Tc = 125°C IGSS Gate-body leakage VGs= ±15 V current (V os = 0) ON ** VGS (th) Gate threshold Vos= VGS 10= 250 IlA 1 voltage Ros (on) Static drain-source VGs= 5 V 10= 7.5A on resistance DYNAMIC gfs Forward Vos= 15 V 10= 7.5 A 5 transconductance C iss Input capacitance 480 Coss Output capacitance Vos= 25 V f = 1 MHz 170 C rss Reverse transfer VGs= 0 40 capacitance SWITCHING td (on) Turn-on time Voo= 25 V 10= 7.5 A 10 tr Rise time Vi= 5 V Ri= 50 n 70 td (off) Turn-off delay time 35 tf Fall time 40 Og Total Gate Charge Voo= 48 V 10= 15 A 8 VGS= 5 V 250 1000 ±100 2.5 0.15 °C/W V V IlA IlA nA V n mho pF pF pF ns ns ns ns nC 612

ELECTRICAL CHARACTERISTICS (Continued) Parameters Test Conditions SOURCE DRAIN DIODE Iso Source-drain current 15 A IsoM(e) Source-drain current 60 A (pulsed) V ** so Forward on voltage Iso= 15 A VGs= 0 1.25 V trr Reverse recovery 80 ns time Orr Reverse recovered Iso =15A di/dt = 100A/p-s 0.15 fJ-C charge Pulsed: Pulse duration :::;; 300 p,s, duty cycle :::;; 2% (e) Pulse width limited by safe operating area lolAI Safe operating areas (standard package) 'S1~ v 10~sr .'ii " A- 100~s lms I- D.C. OPERATION 10msr-- Tc=2S0[ STLT19 I STLT20 G(-0756 , "102 2 'VosiVI Output characteristics lolAI J-+--j-H--+-!-lI-lVGs =10V t-t-t-++-t-H-i I-t-t--I-t+tfI-++++-H-+-+--I-Is v f--V.f-t-+-+-++++-H-+-+--I-I--H3V VoslVI Thermal impedance (standard package) GU1444 Transfer characteristics

12 H-+++++-t-HH--H-+-1 Vos=2SV

H-t-t-+++++-f---1---1f--t-H T J=2SoC

8 VGslVI

(standard package) r--I\\. r\\. "-r-... " \\. GU-1343 '\\. " '\\. 20 40 60 80 100 120 Tease I·CI T ranscond uctance Vos=2SVH--t-+-++-++-Hf--t-H---1 TJ =2S oC H---t-t-++-t-t-H---1---1H-1 lSH-t-t-~~++++-H--H-+-+--H~ 12 16 lolAI 613

ROSloni rr-r-r---'-"..--'--'rrT-r--r.-T""T"-'-"--;:':~ (n) 0.3 H-+i-t-t++-1++-++-H--I-J---L-I--f-..l 0.2 H-+i-t-H--H++-++-H-+-l-l---I--f-..l VGSlth (norm I . 8 614 12 16 (o(A) Normalized gate threshold voltage vs temperature - I--lo=250~A -50 50 100 Source-drain diode forward characteristics I VGS(V) Gate charge vS'gate-source voltage L If / Vos=48V lo=15A --- TJ=25°[ Normalized breakdown voltage vs temperature -""vI-"" lo=250pA i

  • 40 40 80 Capacitance variation CipF) H-r-t-H-l-++-,IH-IH-+-++-I ROS(on (norm.l 1.5 1.0 O.S [rss 1--+-1- 10 20 30 Vos(V) Normalized on resistance vs temperature '" / V Y VGs =5V lo=75A ----- V -80 -40 40 80 120 TJ([)

Switching times test circuit for resistive load I Pulse width ~ 100 its Duty cycle ~ 2% Gate charge test circuit PW adjusted to obtain required VG 3.3 S(-0008/l Voo STL T20/FI - STL T19/FI Switching time waveforms for resistive load Vi I----~/· ~O.,. :~ I I I -Vo : 5-6059 td (otf) If Body-drain diode trr measurement Jedec test circuit 1.8Ma 615

CHARACTERISTICS AND APPLICATION. ISOWATT220 is fully isolated to 2000V dc. Its ther­ mal impedance, given in the data sheet, is optimi­ sed to give efficient thermal conduction together with excellent electrical isolation. The structure of the case ensures optimum distan­ ces between the pins and heatsink. The ISOWATT220 package eliminates the need for ex­ ternal isolation so reducing fixing hardware. Accu­ rate moulding techniques used in manufacture assure consistent heat spreader-to-heatsink capa­ citance. ISOWATT220 thermal performance is better than that of the standard part, mounted with a 0.1 mm mica washer. The thermally conductive plastic has a higher breakdown rating and is less fragile than mica or plastic sheets. Power derating for ISOWATT220 packages is determined by: Tj - Tc Po= ----­ Rth from this lOmax for the POWER MOS can be cal- THERMAL IMPEDANCE OF ISOWATT220 PACKAGE Fig. 1 illustrates the elements contributing to the thermal resistance of transistor heatsink assembly, using ISOWATT220 package. The total thermal resistance Rth (tot) is the sum of each of these elements. The transient thermal impedance, Zth for different pulse durations can be estimated as follows: 1 -for a short duration power pulse less than 1 ms; Zth< RthJ-C 2 -for an intermediate power pulse of 5ms to 50ms: Zth= RthJ-C 3 -for long power pulses of the order of 500ms ,or greater: Zth = R thJ-C + RthC-HS + RthHS-amb It is often possibile to discern these areas on tran­ sient thermal impedance curves. culated: Fig. 1 IOmax~ ISOWATT DATA Safe operating areas ms ~ 100ms STLT19FI III , 10' 'VosIV) RthJ-C RthC-HS RthHS-amb Thermal impedance Derating curve -0422/1 ) GC-0414 6"0.5 ... 50 .!1tr I 111m """ 1111111 40 ~ ~ jZth=KRthj-c is:..!.£. , 1: 'JUl.. , 30 6"0.05 .-t;j 6"0.02 SINfiUI PUlSE ~ III 11111 II III 1111111 "",- i"- o a 25 50 75 100 125 Teos.loc 616